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Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application

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Abstract

In this paper, a new structure for a silicon on insulator Schottky barrier MOSFET (SOI SB-MOSFET) has been proposed. The simulated device is calibrated with experimental result. Here n + pocket doping segregation in the source and drain side have been used. The simulated electrical characteristics of the proposed device With Source Extension (WSE) and With Source Drain Extension (WSDE) reveal more remarkable reduction in drain induced barrier tunneling (DIBT), high Ion/Ioff and low Subthreshold swing(SS) than conventional device. Furthermore, the effect of varying temperature has been investigated on subthreshold swing for various oxide thickness (Tox) and silicon film thickness (TSi). Moreover, proposed SB-MOSFETs have been used in the inverter circuit, exhibit a high gain (˷12) and Noise Margin (NMH = 0.4 and NML = 0.46).

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Acknowledgments

This work was supported by the Council of Scientific & Industrial Research (CSIR grant no. 22 (0737)/17/EMR-II), the Key Grant Project of Indian.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Madanapalle Institute of Technology & Science, Madanapalle, AP, 517325, India

    Prashanth Kumar

  2. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, 788010, India

    Brinda Bhowmick

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  1. Prashanth Kumar
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Correspondence to Prashanth Kumar.

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Kumar, P., Bhowmick, B. Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application. Silicon 12, 821–830 (2020). https://doi.org/10.1007/s12633-019-00170-0

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