Skip to main content
SpringerLink
Log in

Optoelectronic and Mechanical Properties of InSb Semiconductor Under the Effect of Temperature

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

The effect of temperature on the optoelectronic properties of InSb semiconductor such as electronic band structure, direct and indirect energy gaps has been calculated using the local empirical pseudo-potential method (EPM). The variation of optical properties such as optical dielectric constant and refractive index with temperature from (0 to 500 K) has been examined. The elastic constants C11, C12, C44, bulk (B), Young’s (Y) and shear (Cs) moduli have been studied as a function of temperature. The present calculated data are compared with the available experimental values and show excellent agreement. New calculated data at different temperatures have been obtained. No such experimental data are found meaning, the present study is a reference for future work. It was found that the temperature effect is minor on the electronic properties of InSb, therefore this material can be used for fabrication and design of optoelectronic devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Vurgaftman I, Meyer JR, Ram-Mohan LR (2001) J Appl Phys 89:5815

    Article  CAS  Google Scholar 

  2. Souza PL, Ribas PR, Bellini JV, Mendes WM (1996) J Appl Phys 79:3482

    Article  CAS  Google Scholar 

  3. Phillips JC (1973) Bonds and bands in semiconductors. New York Academic Press

  4. Cohen ML, Chelikowsky JR (1988) Electronic structure and optical properties of semiconductors. Springer, Berlin

    Book  Google Scholar 

  5. Huang MZ, Ching WY (1993) Phys Rev B 47:9449

    Article  CAS  Google Scholar 

  6. Balkanski M (1980) Handbook on semiconductors, optical properties of solids, vol 2, North-Holland

  7. Fan HY (1951) Phys Rev 82:900

    Article  CAS  Google Scholar 

  8. Keffer C, Hayes TM, Bienenstock A (1970) Phys Rev B 2:1966

    Article  Google Scholar 

  9. Tsang YW, Cohen ML (1971) Phys Rev B 3:1254

    Article  Google Scholar 

  10. Elabsy AM, Elkenany EB (2010) Physica B 405:266

    Article  CAS  Google Scholar 

  11. Say YFT, Gong B, Mitra SS, Vetelino JF (1972) Phys Rev B 6:2330

    Article  Google Scholar 

  12. Skelton EF, Radoff PL, Bolsaitis P, Verbalis A (1972) Phys Rev B 5:3008

    Article  Google Scholar 

  13. Walter JP, Cohen ML (1969) Phys Rev 183:763

    Article  CAS  Google Scholar 

  14. Ridley BK (1999) Quantum processes in semiconductors, 4th edn. Chapter 1. Clarendon Press, Oxford

    Google Scholar 

  15. Martin RM (2004) Electronic structure basic theory and practical methods. UK Cambridge, p 204

  16. Sharma KS, Bhargava N, Jain R, Goyal V, Sharma R, Sharma S (2010) Indian J Phys 48:59

    CAS  Google Scholar 

  17. Yadav J, Rafique SM, Kumari S (2009) Indian J Phys 83:1487

    Article  CAS  Google Scholar 

  18. Philips JC, Klienman L (1959) Phys Rev 116:287

    Article  Google Scholar 

  19. Cohen MH, Heine V (1961) Phys Rev 122:1821

    Article  CAS  Google Scholar 

  20. Austin BJ, Heine V, Sham LJ (1962) Phys Rev 127:276

    Article  Google Scholar 

  21. Cohen ML, Bergstresser TK (1966) Phys Rev 141:780

    Google Scholar 

  22. Khodaparast GA, Matsuda YH, Saha D, Sanders GD, Stanton CJ, Saito H, Takeyama S, Merritt TR, Feeser C, Wessels BW, Liu X, Furdyna J (2013) Phys Rev B 88:235204

    Article  Google Scholar 

  23. Miranda AL, Bin X, Hellman O, Romero AH, Verstraete MJ (2014) Semicond Sci Technol 29:124002

    Article  Google Scholar 

  24. Santos EC, Neto AFG, Maneschy CE, Chen J, Ramalho TC, Neto AMJC (2015) J Nanosci Nanotechnol 15:3677–3680

    Article  CAS  Google Scholar 

  25. Chan RN, Cohen ML (1) Phys Rev B:2569

  26. Phillips JC, Pandey KC (1976) Phys Rev Lett 30:787

    Article  Google Scholar 

  27. Pandey KC, Phillips JC (1974) Phys Rev B 9:1552

    Article  CAS  Google Scholar 

  28. Chelikowsky JR, Cohen ML (1976) Phys Rev B 14:556

    Article  CAS  Google Scholar 

  29. Gilat A (2005) MATLAB: an introduction with applications, second ed. Wiley, New York

    Google Scholar 

  30. Harrison P (2005) Quantum wells wires and quantum dots, second ed. Wiley, New York. (Chapter 11)

    Book  Google Scholar 

  31. Adachi S (2005) Properties of group-IV, III–V and II–VI semiconductors. Wiley, New York. (Chapter 2)

    Book  Google Scholar 

  32. Vogl P (1978) J Phys C 11:251

    Article  CAS  Google Scholar 

  33. Bouarissa N (2006) Mater Chem Phys 100:41

    Article  CAS  Google Scholar 

  34. Baranowski JM (1984) J Phys C 17:6287

    Article  CAS  Google Scholar 

  35. Levinshtein M, Rumyantsev S, Shur M (1996) Handbook series on semiconductor parameters, vol 1. World Scientific Publ. Co, Singapore

    Book  Google Scholar 

  36. Gueddim A, Zerdoum R, Bouarissa N (2006) Mater Sci Eng B 131:111–115

    Article  CAS  Google Scholar 

  37. Al-Douri Y, Reshak AH, Baaziz H, Charifi Z, Khenata R, Ahmad S, Hashim U (2010) Sol Energy 84:1979–1984

    Article  CAS  Google Scholar 

  38. Gueddim A, Zerdoum R, Bouarissa N (2006) Mater Sci Eng B 131:111–115

    Article  CAS  Google Scholar 

  39. Moss TS (1950) Proc Phys Soc B 63:167

    Article  Google Scholar 

  40. Samara GA (1983) Phys Rev B 27:3494

    Article  CAS  Google Scholar 

  41. Varshni YP (1967) Physica 34:149

    Article  CAS  Google Scholar 

  42. Adachi S (1987) J Appl Phys 61:4869

    Article  CAS  Google Scholar 

  43. Bouarissa N, Aourag H (1995) Infrared Phys Technol 36:973

    Article  CAS  Google Scholar 

  44. Zerroug S, Ali Sahraoui F, Bouarissa N (2006) Mater Lett 60:546–550

    Article  CAS  Google Scholar 

  45. Harrison WA, Ciraci S (1974) Phys Rev B 10:1516

    Article  CAS  Google Scholar 

  46. Zhang X, Ying C, Li Z, Shi G (2012) Superlattice Microst 52:459–469

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, Faculty of Science, Mansoura University, Mansoura, Egypt

    E. B. Elkenany

Authors
  1. E. B. Elkenany
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to E. B. Elkenany.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Elkenany, E.B. Optoelectronic and Mechanical Properties of InSb Semiconductor Under the Effect of Temperature. Silicon 8, 391–396 (2016). https://doi.org/10.1007/s12633-015-9317-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-015-9317-4

Keywords

Search

Navigation