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Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process

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Abstract

Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The optical properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

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References

  1. G.D. Wilk, R.M. Wallace, and J.M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations, J. Appl. Phys., 89(2001), No. 10, p. 5243.

    Article  Google Scholar 

  2. A.I. Kingdom, J.P. Maria, and S.K. Streiffer, Alternative dielectrics to silicon dioxide for memory and logic devices, Nature, 406(2000), p. 1032.

    Article  Google Scholar 

  3. P.E. Batson, Conduction bandstructure in strained silicon by spatially resolved electron energy loss spectroscopy, Ultramicroscopy, 59(1995), No. 1–4, p. 63.

    Article  Google Scholar 

  4. M.P. Agustin, G. Bersuker, B. Foran, L.A. Boatner, and S. Stemmer, Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks, J. Appl. Phys., 100(2006), art. No. 024103.

  5. D.A. Muller, T. Sorsch, S. Moccio, F.H. Baumann, K. Evans-Lutterodt, and G. Timp, The electronic structure at the atomic scale of ultrathin gate oxides, Nature, 399(1999), p. 758.

    Article  Google Scholar 

  6. F.L. Martinez, M. Toledano-Luque, J.J. Gandia, J. Cárabe, W. Bohne, J. Röhrich, E. Strub, and I. Mártil, Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering, J. Phys. D, 40(2007), p. 5256.

    Article  Google Scholar 

  7. M.C. Cheynet, S. Pokrant, F.D. Tichelaar, and J.L. Rouvière, Crystal structure and band gap determination of HfO2 thin films, J. Appl. Phys., 101(2007), art. No. 054101.

  8. H. Kozuka, Handbook of Sol-Gel Science and Technology Processing, Characterization and Applications, Kluwer Academic Publishers, New York, 2005, p. 247.

    Google Scholar 

  9. N.V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, Appl. Phys. Lett., 87(2005), art. No. 192903.

  10. G. He, L.Q. Zhu, M. Liu, Q. Fang, and L.D. Zhang, Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films, Appl. Surf. Sci., 253(2007), No. 7, p. 3413.

    Article  Google Scholar 

  11. K. Jiang, J.T. Anderson, K. Hoshino, D. Li, J.F. Wager, and D.A. Keszler, Low-energy path to dense HfO2 thin films with aqueous precursor, Chem. Mater., 23(2011), No. 4, p. 945.

    Article  Google Scholar 

  12. A.R. Teren, R. Thomas, J.Q. He, and P. Ehrhart, Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films, Thin Solid Films, 478(2005), No. 1–2, p. 206.

    Article  Google Scholar 

  13. X. Zhang, X.H. Song, and D.L. Zhang, Thickness dependence of grain size and surface roughness for dc magnetron sputtered Au films, Chin. Phys. B, 19(2010), No. 8, art. No. 086802.

    Google Scholar 

  14. H. Shimizu, D. Nemoto, M. Ikeda, and T. Nishide, Characteristics of sol-gel-derived and crystallized HfO2 thin films dependent on sol solution, Jpn. J. Appl. Phys., 49(2010), art. No. 121502.

  15. H. Hu, C.X. Zhu, Y.F. Lu, Y.H. Wu, T. Liew, M.F. Li, B.J. Cho, W.K. Choi, and N. Yakolev, Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications, J. Appl. Phys., 94(2003), No. 1, p. 551.

    Article  Google Scholar 

  16. İ.A. Kariper and T. Özpozan, Cobalt xanthate thin film with chemical bath deposition, J. Nanomater., 2013(2013), art. No. 139864.

  17. H.M. Pathan and C.D. Lokhande, Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method, Bull. Mater. Sci., 27(2004) No. 2, p. 85.

    Article  Google Scholar 

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  1. Education Faculty, Erciyes University, 38039, Kayseri, Turkey

    İ. A. Kariper

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  1. İ. A. Kariper
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Kariper, İ.A. Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process. Int J Miner Metall Mater 21, 832–838 (2014). https://doi.org/10.1007/s12613-014-0978-6

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  • DOI: https://doi.org/10.1007/s12613-014-0978-6

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