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XOR spin logic operated by unipolar current based on field-free spin–orbit torque switching induced by a lateral interface

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Abstract

Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures. In particular, the realization of XOR spin logic gates using a single spin–orbit torque device shows great potential for low-power stateful logic circuits in the next generation. In this study, we successfully obtained the XOR logic gate by utilizing a spin–orbit torque device with a lateral interface, which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy. The angle of the lateral interface is set at 45° relative to the current direction, leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion. Consequently, the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface. Based on this field-free magnetic switching behavior, we successfully proposed an XOR logic gate that could be implemented using only a single spin–orbit torque Hall device. This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.

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摘要

自旋逻辑已经成为开发内存中逻辑架构中比较有前途的途径。特别是，利用单个自旋轨道矩器件实现XOR自旋逻辑门，在下一代低功耗逻辑电路中显示出了巨大的潜力。在这项研究中，我们成功地通过利用具有横向界面的自旋轨道矩器件来实现XOR逻辑门，该横向界面是通过在具有垂直磁各向异性的Ta/Pt/Co/Ta Hall器件中进行局部离子注入而创建的。横向界面的角度相对于电流方向设置为45°，导致了对称性破缺机制和电流驱动的Néel型畴壁运动机制之间的竞争。因此，在该界面上可以通过同符号的电流实现无外场磁化翻转曲线。基于这种无外场磁化翻转曲线，我们成功提出了一种仅使用单个自旋轨道矩器件来实现的XOR逻辑门。这项研究为高效的自旋逻辑和内存计算架构提供了一种潜在的可行途径。

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Acknowledgements

This work was financially supported by the Chinese Academy of Sciences (Nos. XDA18000000 and Y201926), the Youth Innovation Promotion Association of CAS (No. 2020118), Beijing Municipal Natural Science Foundation (No. 4244071) and the Funding Support from Research Grants Council—Early Career Scheme (No. 26200520).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, 100029, China

    Yan-Ru Li, Mei-Yin Yang, Jin-Biao Liu, Yong-Liang Li & Jun Luo

  2. University of Chinese Academy of Sciences (UCAS), Beijing, 100049, China

    Mei-Yin Yang & Jun Luo

  3. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    Guo-Qiang Yu & Bao-Shan Cui

  4. Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Guo-Qiang Yu & Bao-Shan Cui

  5. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, 730000, China

    Bao-Shan Cui

  6. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China

    Qi-Ming Shao

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  1. Yan-Ru Li
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Li, YR., Yang, MY., Yu, GQ. et al. XOR spin logic operated by unipolar current based on field-free spin–orbit torque switching induced by a lateral interface. Rare Met. (2024). https://doi.org/10.1007/s12598-024-02713-w

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