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Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

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Abstract

Graphene quantum dots (GQDs) doped InGaO (IGO) thin film transistors (TFTs) have been fabricated based on solution-driven ZrOx as gate dielectrics. Compare to pure IGO TFTs, superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration. It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of 0.3 mg·ml−1 have the optimized performances, including field-effect mobility (μFE) of 22.02 cm2·V–1·s−1, on/off current ratio (Ion/Ioff) of 7.06 × 107, subthreshold swing (SS) of 0.09 V⋅dec−1, hysteresis of 0.04 V and interfacial trap states (Dit) of 1.03 × 1012 cm−2. In addition, bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs. The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress (PBS) test and negative bias stress (NBS) test for 3600 s, respectively. And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s, respectively. Meanwhile, it showed smaller threshold voltage shift of 0.20 and 0.22 V for green light under PBS and NBS test for 3600 s, respectively. It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress (PBIS) test and negative bias illumination stress (NBIS) test for 3600 s, respectively. Low-frequency noise (LFN) characteristics of GQDs-IGO/ZrOx TFTs indicated that the noise source came from the fluctuations in mobility. Finally, a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrOx TFT, demonstrating good dynamic response behavior and a maximum gain of 7.4. These experimental results have suggested that solution-processed GQDs-IGO/ZrOx TFT may envision potential applications in low-cost and large-area electronics.

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摘要

本文以溶液驱动ZrOx为栅介质，制备了石墨烯量子点掺杂InGaO (IGO)薄膜晶体管。与未掺杂IGO TFT相比，GQDs-IGO TFT的电学性能优于未掺杂IGO TFT。 在GQDs掺杂量为0.3 mg ml–1的条件下，GQDs修饰的IGO TFTs器件的场效应迁移率(μFE)为22.02 cm2 V–1 s–1, Ion/Ioff为7.06×107,亚阈值摆幅(SS)为0.09 V Dec–1,阈值电压为0.04 V,界面陷阱态(Dit)为1.03×1012 cm–2。此外，对优化后的GQDs-IGO-TFT进行了偏压稳定性和光照稳定性测试，结果表明，优化后的GQDs-IGO-TFT具有良好的稳定性。GQDs-IGO TFTs器件在3600 s的正偏压测试和负偏压测试中，阈值电压位移分别为0.12和0.04 V。在3600 s的正偏压光照应力(PBIS)和负偏压光照应力(NBIS)试验中，红光的阈值电压位移分别为0.27和0.34 V。同时，在3600 s的PBIS测试和NBIS测试下，绿光的阈值电压位移分别为0.20和0.22 V。在3600 s的PBIS测试和NBIS测试下，蓝光的阈值电压位移分别为0.17和0.12 V。 GQDs-IGO/ZrOx TFTs的低频噪声(LFN)特性表明，噪声源来自迁移率的涨落。最后，基于GQDs-IGO/ZrOx TFT构建了一个低电压电阻负载的单极性逆变器，具有良好的动态响应特性，最大增益为7.4。我们的实验结果表明，溶液处理GQDs-IGO/ZrOx薄膜晶体管在低成本和大面积电子学领域具有潜在的应用前景。

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (No. 11774001), Anhui Project (No. Z010118169) and Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (No. MEMSZJERC2202).

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    Xiao-Fen Xu, Gang He, Lei-Ni Wang, Wen-Hao Wang & Xiao-Yu Wu

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Xu, XF., He, G., Wang, LN. et al. Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration. Rare Met. 42, 2294–2306 (2023). https://doi.org/10.1007/s12598-023-02307-y

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