Abstract
The design of novel devices with specific technical interests through modulating structural properties and bonding characteristics promotes the vigorous development of materials informatics. Boron arsenide and boron nitride, as remarkably high thermal conductivity (κ) materials, are unfavorable for thermal insulation applications as well as thermoelectric devices. In this study, based on first-principles calculations, we identify a group of novel borides with ultra-low κ, i.e., g-B3X5 (X = N, P, and As). The κ of g-B3N5, g-B3P5, and g-B3As5 are 21.08, 2.50, and 1.85 W·m−1·K−1, respectively, which are boron nitride and boron arsenide systems with the lowest κ reported so far. The ultra-low κ is attributed to the synergy effect of electronics (lone-pair electrons) and geometry (buckling structures) on thermal transport. The discovery of the ultra-low κ of boron nitride and boron arsenide systems can well fill the gaps in applications of thermal insulation and thermoelectric devices.
Graphical abstract
摘要
通过调节结构特征和键合特性来设计具有特定功能的新型电子器件材料, 促进了材料信息学的蓬勃发展。作为高热导率 (κ) 材料, 砷化硼和氮化硼体系不利于隔热,绝热以及热电器件等应用。 基于第一性原理计算, 我们报道了一组具有超低热导率的新型硼化物, 即 g-B3X5(X = N、P 和 As) 。 g-B3N5、g-B3P5和g-B3As5的热导率分别为21.08、2.50和1.85 W m−1 K−1, 是迄今为止报道具有最低热导率的氮化硼和砷化硼化合物。 超低热导率归因于电子学 (孤对电子) 和几何学 (屈曲结构) 对热传输的协同抑制作用,并且它们的发现可以很好地填补隔热和热电器件等应用中的空白。
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Acknowledgments
This study was financially supported by the National Natural Science Foundation of China (Nos. 52006057, 52006059 and 51906097), the Fundamental Research Funds for the Central Universities (Nos. 531119200237 and 541109010001 531118010490), and the State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body at Hunan University (No. 52175011). The numerical calculations in this paper have been done on the supercomputing system of the E.T. Cluster and the National Supercomputing Center in Changsha. Simulations were also performed with computing resources granted by RWTH Aachen University under project bund0011.
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Yu, LF., Xu, JY., Shen, C. et al. Realizing ultra-low thermal conductivity by strong synergy of asymmetric geometry and electronic structure in boron nitride and arsenide. Rare Met. 42, 210–221 (2023). https://doi.org/10.1007/s12598-022-02187-8
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DOI: https://doi.org/10.1007/s12598-022-02187-8