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Sign reversal and manipulation of anomalous Hall resistivity in facing-target sputtered Pt/Mn4N bilayers

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Abstract

The magnetic and electronic transport properties manipulated by spin–orbit torque have been devoted much attention as they show a great promise for future spintronic devices. Here, the spin dependent transport properties of the facing-target sputtered Pt/Mn4N bilayers on MgO (001) substrates have been investigated systematically. The Hall resistivity of Pt/Mn4N bilayers is strongly dependent on temperature, applied current intensity, Mn4N and Pt layer thicknesses. The temperature-dependent sign reversal of anomalous Hall resistivity appears in Pt/Mn4N bilayers, which is dominated by the competition between the magnetic proximity and spin Hall effects. Besides, the magnitude of anomalous Hall resistivity can be manipulated by applied current density. The critical and saturation currents are related to Mn4N and Pt layer thicknesses. Furthermore, a Dzyaloshinskii–Moriya interaction coefficient (D) of 5.63 mJ·m−2 is calculated in Pt/Mn4N/MgO systems. The details of the anomalous Hall effects in Pt/Mn4N bilayers are helpful to understand the interfacial effects between heavy metals and ferrimagnets.

摘要

通过自旋轨道矩调控磁性和电输运特性因在自旋电子器件的应用前景引起了诸多关注。本文采用对向靶溅射在MgO(001)基底上制备了Pt/Mn4N双层膜, 系统研究了其自旋相关的输运特性。Pt/Mn4N双层膜的霍尔电阻率与温度、电流强度、Mn4N和Pt厚度有强相关性。Pt/Mn4N双层膜的霍尔电阻率随温度变化发生翻转, 归因于磁近邻效应和自旋霍尔效应间的竞争。此外, 霍尔电阻率的大小还能通过电流强度调控, 临界电流密度与饱和电流密度与Mn4N和Pt厚度相关。计算结果表明Pt/Mn4N/MgO体系中的Dzyaloshinskii–Moriya相互作用系数为5.63 mJ·m-2。Pt/Mn4N双层膜中反常霍尔效应的研究有助于理解重金属与亚铁磁体间的界面效应。

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Acknowledgements

This study was financially supported by the National Natural Science Foundation of China (No. 52071233).

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  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin, 300354, China

    Ze-Yu Zhang, Jia-Wei Jiang, Xia Chen & Wen-Bo Mi

  2. School of Physics and Electronic Engineering, Linyi University, Linyi, 276000, China

    Xiao-Hui Shi

  3. College of Science, Civil Aviation University of China, Tianjin, 300300, China

    Xiang Liu

  4. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China

    Zhi-Peng Hou

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Zhang, ZY., Jiang, JW., Shi, XH. et al. Sign reversal and manipulation of anomalous Hall resistivity in facing-target sputtered Pt/Mn4N bilayers. Rare Met. 42, 591–601 (2023). https://doi.org/10.1007/s12598-022-02166-z

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