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Epitaxial integration of a perpendicularly magnetized ferrimagnetic metal on a ferroelectric oxide for electric-field control

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Abstract

Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here, we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect (AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 single crystals with a MgO buffer layer. It was found that the AHE of such a ferrimagnet can be effectively modulated by a small electric field over a large temperature range in a nonvolatile manner. This work thus demonstrates the great potential of ferrimagnets for developing high-density and low-power spintronic devices.

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摘要

亚铁磁材料由于兼具铁磁材料(可探测磁矩)和反铁磁材料(超快自旋动力学)的优点,近年来受到了广泛关注。在本文中,我们报道了具有垂直磁化特性的四方相亚铁磁Mn2Ga在MgO基片上外延生长,并且系统地研究了其电输运、磁性和反常霍尔效应。进一步,我们成功地将高质量的亚铁磁Mn2Ga薄膜外延集成到具有MgO缓冲层的铁电PMN-PT单晶基片上。研究发现,亚铁磁Mn2Ga的反常霍尔效应可以被一个微小电场宽温域非易失地有效操控。因此,这项工作展示了亚铁磁体在开发高密度和低功耗自旋电子器件方面的应用潜力。

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Acknowledgements

This study was financially supported by the National Natural Science Foundation of China (Nos. 52121001, 51822101, 51861135104 and 51771009).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Beihang University, Beijing, 100191, China

    Xin Zhang, Pei-Xin Qin, Ze-Xin Feng, Han Yan, Xiao-Ning Wang, Xiao-Rong Zhou, Hao-Jiang Wu, Hong-Yu Chen, Zi-Ang Meng & Zhi-Qi Liu

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  1. Xin Zhang
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  2. Pei-Xin Qin
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  3. Ze-Xin Feng
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Correspondence to Zhi-Qi Liu.

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Zhang, X., Qin, PX., Feng, ZX. et al. Epitaxial integration of a perpendicularly magnetized ferrimagnetic metal on a ferroelectric oxide for electric-field control. Rare Met. 41, 1554–1562 (2022). https://doi.org/10.1007/s12598-021-01898-8

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