Graphic Abstract
摘要
常规的电子和光电子器件制备工艺会对二维半导体的本征性质产生较大的改变。为了解决这一问题, 人们提出了一些干式器件制备方法, 如“转移电极接触”法和“阴影掩膜”法。然而, 能在亚微米尺度下兼具低成本、无损、高可靠性等优点的方法却鲜有报道。在此, 我们演示了一种使用超细石英纤维为阴影掩膜的器件制备技术。这项技术可以“全干式”地轻松制备出亚微米尺度的器件, 并且能保留二维半导体的本征特性。同时, 利用石英纤维与衬底之间的白光干涉, 可以对掩模效果进行原位评估, 提高器件制备的可靠性。此外, 该方法操作灵活, 可以在单个衬底甚至单个晶粒上制造多个器件。该技术为制备亚微米尺寸器件提供了一种简便、无损、可靠的替代方法。
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Acknowledgements
This work was financially supported by the National Natural Science Foundation of China (Nos. 61734006, 61835011 and 61991430) and the National Basic Research Program of China (Nos. 2018YFA0209100 and 2020YFB0408400). The authors would like to thank Ping Liang and Ying Hu from the Institute of Semiconductors Chinese Academy of Sciences for their help in device processing.
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Li, LA., Zhao, FY., Zhai, SQ. et al. A facile and non-destructive quartz fiber shadow mask process for the sub-micrometer device fabrication on two-dimensional semiconductors. Rare Met. 41, 319–324 (2022). https://doi.org/10.1007/s12598-021-01787-0
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DOI: https://doi.org/10.1007/s12598-021-01787-0