Abstract
The spin transport was investigated in permally (Py)/MgO/Ag junction with lateral spin valve structure. Non-local lateral spin valves measurement was carried out to determine the spin accumulation signal in Ag strip, and the spin diffusion length in Ag of the lateral spin valves was extracted from devices with the different distances between injector and detector. The experimental results are found that spin accumulation and spin diffusion length (λ s) could be significantly enhanced in Ag strip with MgO capping layer, and those effects may be attributed to the low-surface spin scattering rate in Ag with an MgO capping layer.
Similar content being viewed by others
References
Johnson M, Silsbee RH. Interfacial charge-spin coupling: injection and detection of spin magnetization in metals. Phys Rev Lett. 1985;55(17):1790.
Jedema FJ, Filip AT, Van WB. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve. Nature. 2001;410(6826):345.
Ji Y, Hoffmann A, Jiang JS, Bader SD. Spin injection, diffusion, and detection in lateral spin-valves. Appl Phys Lett. 2004;85(25):6218.
Godfrey R, Johnson M. Spin injection in mesoscopic silver wires: experimental test of resistance mismatch. Phys Rev Lett. 2006;96(13):136601.
Ku J, Chang J, Han SH, Geun HJ, Eom J. Spin injection in NiFe/Au/NiFe spin valves. J Magn Magn Mater. 2006;304(1):273.
Takahashi S, Maekawa S. Spin current, spin accumulation and spin hall effect. Sci Technol Adv Mater. 2008;9(1):014105.
Johnson M. Optimized device characteristics of lateral spin valves. IEEE Trans Electron Devices. 2007;54(5):1024.
Mihajlovic G, schreiber DK, Liu Y, Pearson JE, Bader SD, Petford-Long AK, Hoffmann A. Enhanced spin signals due to native oxide formation in Ni80Fe20/Ag lateral spin valves. Appl. Phys. Lett. 2010;97(11):112502.
Kimura T, Hara M. Nonvolatile multiple-valued memory device using lateral spin valve. Appl Phys Lett. 2010;97(18):182501.
Wang XJ, Zou H, Ocala LE, Ji Y. High spin injection polarization at an elevated DC bias in tunnel-junction-based lateral spin valves. Appl Phys Lett. 2009;95(2):022519.
Vogel A, Wulfhorst J, Meier G. Enhanced spin injection and detection in spin valves with integrated tunnel barriers. Appl Phys Lett. 2009;94(12):122510.
Zhao CJ, Ding L, HuangFu JS, Zhang JY, Yu GH. Research progress in anisotropic magnetoresistance. Rare Met. 2013;32(4):323.
Ku J, Chang J, Kim H, Eom J. Effective spin injection in Au film from Permalloy. Appl Phys Lett. 2006;88(17):172510.
Valenzuela SO, Monsma DJ, Marcus CM, Narayanamurti V, Tinkham M. Spin polarized tunneling at finite bias. Phys Rev Lett. 2005;94(19):196601.
Fukuma Y, Wang L, Idzuchi H, Takahashi S, Maekawa S, Otani Y. Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves. Nat Mater. 2011;10(7):527.
Takahashi S, Maekawa S. Spin injection and detection in magnetic nanostructures. Phys Rev B. 2003;67(5):2720.
Erekhinsky M, Sharoni A, Casanova F, Schuller I. Surface enhanced spin-flip scattering in lateral spin valves. Appl Phys Lett. 2010;96(2):022513.
Acknowledgments
This work was financially supported by the National Natural Science Foundation of China (Nos.11304381 and 11174366) and the Research Funds of Renmin University of China (No. 13XNLF02).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Pan, LJ., Wang, L. & Zhang, LY. Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves. Rare Met. 34, 156–159 (2015). https://doi.org/10.1007/s12598-014-0409-x
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12598-014-0409-x