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Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method

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Abstract

By the method of descending crucible with rotation, crack-free CdGeAs2 single crystals of Φ15 mm × 50 mm were grown in a furnace with three independent heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2 crystal growth. The properties of as-grown crystal were characterized by a variety of techniques. The results of X-ray diffraction (XRD) show that there are two cleavage faces, which are (110) and (101). The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2 crystal is closer to the stoichiometry. The IR transmittance of the wafer is ~48.6 % at 5.5 μm, and the maximum value is up to 51.6 % in the range of 2.3–18.0 μm. Etch pits of (001) face are observed and the density of the etch pits is evaluated to be 1 × 105 cm−2.

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Acknowledgments

This work was financially supported by the National Natural Science Foundation Key Programs of China (No. 50732005) and the National High Technology Research and Development Program of China (No. 2007AA03Z443).

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Authors and Affiliations

  1. Department of Materials Science, Sichuan University, Chengdu, 610064, China

    Wei Huang, Bei-Jun Zhao, Shi-Fu Zhu, Zhi-Yu He, Bao-Jun Chen, Jing-Jing Tang & Wei-Jia Liu

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  1. Wei Huang
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  2. Bei-Jun Zhao
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  3. Shi-Fu Zhu
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Correspondence to Bei-Jun Zhao.

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Huang, W., Zhao, BJ., Zhu, SF. et al. Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method. Rare Met. 33, 210–214 (2014). https://doi.org/10.1007/s12598-013-0108-z

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  • DOI: https://doi.org/10.1007/s12598-013-0108-z

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