Abstract
The In2O3: W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10−3 Ω·cm, highest carrier mobility of 43.7 cm2·V−1·s−1 and carrier concentration of 1.4×1020 cm−3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
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Lavareda G., de Carvalho. C.N., Fortunato E., Ramos A.R., Alves E., Conde O., and Amaral A., Transparent thin film transistors based on indium oxide semiconductor, Journal of Non-Crystalline Solids, 2006, 352(23–25): 2311.
Lewis B.G., and Paine D.C., Applications and processing of transparent conducting oxides, Mrs Bulletin, 2000, 25(8): 22.
Singh A.V., Mehra R.M., Buthrath N., Wakahara A., and Yoshida A., Highly conductive and transparent aluminum-doped zinc oxide thin films prepared by pulsed laser deposition in oxygen ambient, Journal of Applied Physics, 2001, 90(11): 5661.
Kim H., Horwitz J.S., Kushto G.P., Qadri S.B., Kafari Z.H., and Chrisey D.B., Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes, Applied Physics Letters, 2001, 78(8): 1050.
Selvan J.A.A., Delahoy A.E., Guo S.Y., and Li Y.M., A new light trapping TCO for nc-Si: H solar cells, Solar Energy Materials and Solar Cells, 2006, 90(18–19): 3371.
Feng J.H., Yang M., Li G.F., and Zhang Q., Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target, Journal of Non-Crystalline Solids, 2009, 355(14–15): 821.
Meng Y., Yang X.L., Chen H.X., Shen J., Jiang Y.M., Zhang Z.J., and Hua Z.Y., A new transparent conductive thin film In2O3: Mo, Thin Solid Films, 2001, 394(1–2): 219.
Meng Y., Yang X.L., Chen H.X., Shen J., Jiang Y.M., Zhang Z.J., and Hua Z.Y., Molybdenum-doped indium oxide transparent conductive thin films, Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 2002, 20(1): 288.
Gupta R.K., Ghosh K., Mishra S.R., and Kahol P.K., Structural, optical and electrical characterization of highly conducting Mo-doped In2O3 thin films, Applied Surface Science, 2008, 254(13): 4018.
Li X.F., Zhang Q., Miao W.H., Huang L., and Zhang Z.J., Transparent conductive oxide thin films of tungsten-doped indium oxide, Thin Solid Films, 2006, 515(4): 2471.
Newhouse P.F., Park C.H., Keszler D.A., Tate J., and Nyholm P.S., High electron mobility W-doped In2O3 thin films by pulsed laser deposition, Applied Physics Letters, 2005, 87(11): 11.
Minami T., New n-type transparent conducting oxides, Mrs Bulletin, 2000, 25(8): 38.
Pei Z.L., Sun C., Tan M.H., Xiao J.Q., Guan D.H., Huang R.F., and Wen L.S., Optical and electrical properties of direct-current magnetron sputtered ZnO: Al films, Journal of Applied Physics, 2001, 90(7): 3432.
Yoshida Y., Wood D.M., Gessert T.A., and Coutts T.J., High-mobility, sputtered films of indium oxide doped with molybdenum, Applied Physics Letters, 2004, 84(12): 2097.
Hamberg I., and Granqvist C.G., Transparent and infrared-reflecting indium-tin-oxide films: quantitative modeling of the optical properties, Applied Optics, 1985, 24(12): 1815.
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Zhang, Y., Li, Y., Li, C. et al. Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films. Rare Metals 31, 168–171 (2012). https://doi.org/10.1007/s12598-012-0485-8
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DOI: https://doi.org/10.1007/s12598-012-0485-8