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Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

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Abstract

The CuInSe2 compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CuInSe2 films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). It is indicated that ideal stoichiometric CuInSe2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm2. Single-phase CuInSe2 is formed in the selenization process, and it exhibits preferred orientation along the (112) plane. The CuInSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60°C.

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China

    Yanlai Wang

  2. China National R&D Center for Tungsten Technology, Xiamen, 361006, China

    Hongbo Nie

  3. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    Shiju Guo

Authors
  1. Yanlai Wang
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  2. Hongbo Nie
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  3. Shiju Guo
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Correspondence to Yanlai Wang.

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Wang, Y., Nie, H. & Guo, S. Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology. Rare Metals 29, 519–523 (2010). https://doi.org/10.1007/s12598-010-0160-x

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  • DOI: https://doi.org/10.1007/s12598-010-0160-x

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