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X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide

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Abstract

This study focused on the damaged layer of silicon carbide produced during polishing. For the experiment, 2-inch single-crystal 4H-SiC was used. In order to analyze the damaged layer, microscope methods such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM) could be used. However, this study used nondestructive X-ray diffraction (XRD). The surface roughness value and surface image of the material before and after were confirmed using atomic force microscopy, and the full width at half maximum (FWHM) was measured using XRD. After mechanical polishing (MP), the depth of the damaged layer was 400 nm, and the corresponding FWHM value was 0.01711°. After 100 s of chemical mechanical polishing (CMP), the depth of the damaged layer was 69 nm and the corresponding FWHM value was 0.00444°. After 120 s of CMP, the depth of the damaged layer was 37 nm and the corresponding FWHM value was 0.00394°. The relationship between the surface roughness value and the FWHM was confirmed by comparing the values before and after each process. Furthermore, the SEM and TEM images enabled confirmation of the relationship between the damaged layer depth and the FWHM.

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Acknowledgements

This work was supported by a grant-in-aid from the Presidential Committee for Balanced National Development and Busan Metropolitan City (Project No. B0071016000042).

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  1. School of Mechanical Engineering, Graduate School, Pusan National University, Busan, South Korea

    Hokyoung Jung, Seonho Jeong, Youngwook Park, Yeongil Shin & Haedo Jeong

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  1. Hokyoung Jung
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Correspondence to Haedo Jeong.

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Jung, H., Jeong, S., Park, Y. et al. X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide. Int. J. Precis. Eng. Manuf. 24, 25–32 (2023). https://doi.org/10.1007/s12541-022-00711-5

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  • DOI: https://doi.org/10.1007/s12541-022-00711-5

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