Abstract
Heat generation is inevitable during the chemical mechanical planarization (CMP) process because the mechanical and chemical removal of material is carried out by using abrasives and chemicals in the CMP slurry. In this paper, results obtained from experiments performed on a membrane-type carrier having a retaining ring were used to study the temperature distribution in a polishing pad during the CMP process. To understand and predict the distribution of temperature rise, a kinematical analysis of the temperature distribution was performed by considering the frictional characteristics of the process. The results of this study can be used to predict the temperature distribution in a polishing pad, and such predictions can help in developing a more effective CMP process.
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Abbreviations
- P :
-
an arbitrary position on the polishing pad
- D :
-
distance from the center of the pad to that of the wafer
- r :
-
distance from the center of the pad to an arbitrary position P
- ω w :
-
angular velocity of the carrier
- ω p :
-
angular velocity of the platen
- \(\vec r(t)\) :
-
position vector of P
- t :
-
polishing time
- V :
-
magnitude of the relative velocity
- t′:
-
contact time of an arbitrary position P and the wafer during one revolution of the pad
- r w :
-
radius of the wafer
- S :
-
sliding distance of the pad
- n :
-
numbers of revolutions of the pad
- ΔT ▭ :
-
temperature rise per unit area of the pad
- f ▭ :
-
friction force per unit area
- k 1 and k 2 :
-
factor determined by interface conditions for a phenomenological best fit
- α :
-
factor of energy for the temperature rise in the retainer-ring area
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Lee, H., Guo, Y. & Jeong, H. Temperature distribution in polishing pad during CMP process: Effect of retaining ring. Int. J. Precis. Eng. Manuf. 13, 25–31 (2012). https://doi.org/10.1007/s12541-012-0004-8
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DOI: https://doi.org/10.1007/s12541-012-0004-8