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Impurity-controlled Mo films as diffusion barriers for Cu metallization

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Abstract

Effects of vacuum conditions on the oxygen content and microstructure of Mo layers used with Cu gate lines as thin-film transistor-liquid crystal display diffusion barriers were investigated. Mo was deposited using ion-beam sputtering at 1.0 × 10−5 and 7.0 × 10−7 Torr. The Mo layer oxygen content and the microstructure and changes in chemical composition of the Cu/Mo/SiO2/Si layer during annealing were examined. The Mo layer microstructure was influenced by oxygen; increasing concentration increased the energy required for secondary grain growth. Growth was suppressed at high oxygen levels. Therefore, diffusion barrier performance is enhanced by finer Mo layer grain sizes.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea

    Gil Ho Gu, Sung Min Park & Chan Gyung Park

  2. National Center for Nanomaterials Technology (NCNT), Pohang, Kyungbuk, 790-784, Korea

    Chan Gyung Park

Authors
  1. Gil Ho Gu
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  2. Sung Min Park
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  3. Chan Gyung Park
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Correspondence to Chan Gyung Park.

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Gu, G.H., Park, S.M. & Park, C.G. Impurity-controlled Mo films as diffusion barriers for Cu metallization. Met. Mater. Int. 18, 517–520 (2012). https://doi.org/10.1007/s12540-012-3021-3

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  • DOI: https://doi.org/10.1007/s12540-012-3021-3

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