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Larger in-plane upper critical field and superconducting diode effect observed in topological superconductor candidate InNbS2 nanoribbons

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Abstract

Recently, the coexistence of topology and superconductivity has garnered considerable attention. Specifically, the dimensionality of these materials is crucial for the realization of topological quantum computation. However, the naturally grown materials, especially with one-dimensional feature that exhibits the coexistence of topology and superconductivity, still face challenges in terms of experimental realization and scalability, which hinders the fundamental research development and the potential to revolutionize quantum computing. Here, we report the first experimental synthesis of quasi-one-dimensional InNbS2 nanoribbons that exhibit the coexistence of topological order and superconductivity via a chemical vapor transport method. Especially, the in-plane upper critical field of InNbS2 nanoribbons exceeds the Pauli paramagnetic limit by more than 2.2 times, which can be attributed to the enhanced spin-orbit coupling and the weakened interlayer interaction between the NbS2 layers induced by the insertion of In atoms, making InNbS2 exhibit spin-momentum locking similar to that of monolayer NbS2. Moreover, for the first time, we report the superconducting diode effect in a quasi-one-dimensional superconductor system without any inherent geometric imperfections. The measured maximum efficiency is manifested as 14%, observed at μ0H ≈ ±60 mT, and we propose that the superconducting diode effect can potentially be attributed to the presence of the nontrivial topological band. Our work provides a platform for studying exotic phenomena in condensed matter physics and potential applications in quantum computing and quantum information processing.

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Acknowledgements

This work was supported by Innovation Program for Quantum Science and Technology (No. 2021ZD0302800), the National Natural Science Foundation of China (Nos. 52373309 and 12374177), University of Macau Start-up research grant (No. SRG2023-00057-IAPME), and National Synchrotron Radiation Laboratory (No. KY2060000177). This research was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.

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  1. Bo Zheng, Changlong Wang, and Xukun Feng contributed equally to this work.

Authors and Affiliations

  1. Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China

    Bo Zheng, Changlong Wang, Shasha Wang, Xiang Ma, Ruimin Li, Yalin Lu & Bin Xiang

  2. Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore

    Xukun Feng

  3. School of Microelectronics, University of Science and Technology of China, Hefei, 230052, China

    Xiaozhen Sun & Peng Li

  4. CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei, 230026, China

    Dawei Qiu & Guanglei Cheng

  5. Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, 230009, China

    Lan Wang

  6. Research Laboratory for Quantum Materials, IAPME, University of Macau, Macau, China

    Shengyuan A. Yang

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  1. Bo Zheng
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Larger in-plane upper critical field and superconducting diode effect observed in topological superconductor candidate InNbS2 nanoribbons

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Zheng, B., Wang, C., Feng, X. et al. Larger in-plane upper critical field and superconducting diode effect observed in topological superconductor candidate InNbS2 nanoribbons. Nano Res. (2024). https://doi.org/10.1007/s12274-024-6599-0

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