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Intrinsic spin Hall resonance in Bi-based Janus monolayers

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Abstract

The spin Hall resonance effect (SHRE) characterized by a large spin Hall conductivity (SHC) holds immense promise for achieving spin logic and memory devices. However, the identification of a material capable of achieving intrinsic SHRE remains elusive. Herein, we present compelling evidence of intrinsic SHRE within the Bi-based Janus BiXY (X = S, Se and Te; Y = Cl, Br and I) monolayers through first-principles calculations and an effective Hamiltonian model. We attribute the unusual scenario to the warping effect in the Janus monolayers which induces a non-zero out-of-plane spin component, accompanied by additional Rashba degenerate points. Furthermore, we develop a comprehensive effective Rashba Hamiltonian, incorporating high order terms of k to accurately describe the intrinsic SHRE and establish the resilience of this phenomenon in the Janus monolayers. Our study presents a captivating platform for exploring intrinsic SHRE and opens up exciting avenues for the development of novel spintronic devices.

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Acknowledgenents

This study is supported by the National Natural Science Foundation of China (No. 12074218) and the Taishan Scholar Program of Shandong Province.

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  1. School of Physics, Shandong University, Jinan, 250100, China

    Lei Sun, Xikui Ma, Jian Liu, Yangyang Li & Mingwen Zhao

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  1. Lei Sun
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Sun, L., Ma, X., Liu, J. et al. Intrinsic spin Hall resonance in Bi-based Janus monolayers. Nano Res. 16, 12626–12632 (2023). https://doi.org/10.1007/s12274-023-5908-3

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