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The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

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Abstract

There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures, and the impurity-related deep energy level behavior will have a significant impact on device performance. However, a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures. We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence (CL) mapping. We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals. The lateral growth sector, i.e., the \(\{10\bar{1}1\}\) sector, forms six side facets of the microdisk and shows significant near-bandgap emission (NBE) and weak deep energy level luminescence. Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface (Ra < 0.7 nm) and low stress. The self-assembled microdisk shows significant ultraviolet (UV) lasing action (main lasing peak wavelength 370.9 nm, quality factor 1278, threshold 6 × 104 µJ/cm2) under pulsed optical pumping. We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk, the high structural quality, the low content of deep energy level defects, the low surface roughness, and the low stress.

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Acknowledgements

We thank Dr. JueMin Yi and Dr. Miao Wang in Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO) for valuable discussions. This work was supported by the National Key R&D Program of China (No. 2021YFB3602000) and the Fundamental Research Funds for the Central Universities (No. WK5290000003). The authors are grateful for the technical support for Nano-X from SINANO.

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Authors and Affiliations

  1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China

    Zhiwei Si, Jianfeng Wang & Ke Xu

  2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    Zhiwei Si, Zongliang Liu, Xiaoming Dong, Shunan Zheng, Xiaodong Gao, Jianfeng Wang & Ke Xu

  3. Suzhou Nanowin Science and Technology Co, Ltd., Suzhou, 215123, China

    Jianfeng Wang & Ke Xu

  4. Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, Suzhou, 215123, China

    Zongliang Liu, Jianfeng Wang & Ke Xu

  5. State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China

    Xiaoxuan Wang & Chunxiang Xu

  6. Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710049, China

    Wei Lin, Xiaoxuan Luo & Feng Li

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  1. Zhiwei Si
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Correspondence to Zongliang Liu, Jianfeng Wang or Ke Xu.

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Si, Z., Liu, Z., Wang, X. et al. The effect of lateral growth of self-assembled GaN microdisks on UV lasing action. Nano Res. 16, 11096–11106 (2023). https://doi.org/10.1007/s12274-023-5845-1

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