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How to build good inverters from nanomaterial-based transistors

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Abstract

As promising components of future integrated circuits (ICs), field-effect transistors (FETs) based on semiconducting nanomaterials are being extensively investigated. As the most essential component of ICs, inverters are favored to be demonstrated at the infant stage of emerging technologies. However, systematic research is absent to reveal how the parameters of transistors affect the performance of inverters, e.g. the voltage transfer characteristics (VTCs). In this work, systematic analysis about the dependency between transistor- and inverter-level metrics have been carried out for both complementary metal-oxide-semiconductor (CMOS) and monotype (p-type-only and n-type-only) technologies, which is further experimentally demonstrated by carbon nanotube FETs and ICs. We also propose guidelines towards the high noise margin and rail-to-rail inverter design based on nanomaterials.

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Acknowledgements

This work is supported by the National Key Research and Development Program (No. 2022YFB4401601) and the National Science Foundation of China (Nos. 62225101, 62101008 and U21A6004).

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Authors and Affiliations

  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China

    Pengkun Sun, Nan Wei, Panpan Zhang, Yingjun Yang, Maguang Zhu, Huiwen Shi, Lian-Mao Peng & Zhiyong Zhang

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  1. Pengkun Sun
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Correspondence to Nan Wei or Zhiyong Zhang.

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Sun, P., Wei, N., Zhang, P. et al. How to build good inverters from nanomaterial-based transistors. Nano Res. 16, 12594–12600 (2023). https://doi.org/10.1007/s12274-023-5678-y

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