Abstract
Single-layer MoS2 produced by mechanical exfoliation is usually connected to thicker and multilayer regions. We show a facile laser trimming method to insulate single-layer MoS2 regions from thicker ones. We demonstrate, through electrical characterization, that the laser trimming method can be used to pattern single-layer MoS2 channels with regular geometry and electrically disconnected from the thicker areas. Scanning photocurrent microscope further confirms that in the as-deposited flake (connected to a multilayer area) most of the photocurrent is being generated in the thicker flake region. After laser trimming, scanning photocurrent microscopy shows how only the single-layer MoS2 region contributes to the photocurrent generation. The presented method is a direct-write and lithography-free (no need of resist or wet chemicals) alternative to reactive ion etching process to pattern the flakes that can be easily adopted by many research groups fabricating devices with MoS2 and similar two-dimensional materials.
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Acknowledgements
Financial supports from the National Natural Science Foundation of China (NSFC) (Nos. 62011530438 and 61704129) are acknowledged. This work was partially supported by the Key Research and Development Program of Shaanxi (No. 2021KW-02), the fundamental Research Funds for the Central Universities (No. JB211409 and 20109215605), and the fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University (No. SKLSP201612).
We acknowledge funding by European Research Council (ERC) through the project 2D-TOPSENSE (GA 755655), European Union’s Horizon 2020 research and innovation program (Graphene Core2-Graphene-based disruptive technologies (No. 881603) and Graphene Core3-Graphene-based disruptive technologies (No. 956813)), EU FLAG-ERA through the project To2Dox (No. JTC-2019-009), the Comunidad de Madrid through the project CAIRO-CM project (No. Y2020/NMT-6661), and the Spanish Ministry of Science and Innovation through the project (No. PID2020-118078RB-I00). O. Ç. acknowledges the European Union’s Horizon 2020 research and innovation program under the grant agreement 956813 (2Exciting). S. P. acknowledges the fellowship PRE2018-084818.
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Xie, Y., Çakıroğlu, O., Hu, W. et al. Laser trimming for lithography-free fabrications of MoS2 devices. Nano Res. 16, 5042–5046 (2023). https://doi.org/10.1007/s12274-022-5241-2
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DOI: https://doi.org/10.1007/s12274-022-5241-2