Abstract
The chemical vapor deposition (CVD) method has been widely used to synthesize high-quality two-dimensional (2D) materials. However, just one type of product can be synthesized by general CVD at one time. Here, we demonstrate a one-step CVD method to simultaneously grow two types of products. Importantly, the products can be completely separated by selecting the deposition region. In detail, the controllable and completely separable growth for α-GeTe and Te nanosheets was realized by using one precursor-GeTe powder through the atmospheric pressure CVD (APCVD) approach. High crystal quality of the as-grown α-GeTe nansosheets and Te nanosheets have been proved by the high-resolution transmission electron microscopy (HRTEM) characterization. Further, the field-effect-transistor (FET) based on α-GeTe nanosheet manifests that the as-grown α-GeTe nanosheet is a degenerate semiconductor due to the intrinsic Ge vacancies. Additionally, Te-based FET devices indicate that the good electrical performance of the as-grown Te nanosheet, such as high mobility of 900 cm2V−1s−1 (at room temperature), high on/off ratio of < 106 (at 77 K), and good air-stability. The developed one-step CVD method shows the huge potentials for high-efficiency and high-quality material growth.
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Cao, W.; Kang, J. H.; Sarkar, D.; Liu, W.; Banerjee, K. 2D semiconductor FETs—Projections and design for sub-10 nm VLSI. IEEE Trans. Electron Devices 2015, 62, 3459–3469.
Butler, S. Z.; Hollen, S. M.; Cao, L. Y.; Cui, Y.; Gupta, J. A.; Gutiérrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J. X.; Ismach, A. F. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 2013, 7, 2898–2926.
Li, X. S.; Cai, W. W.; An, J.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312–1314.
Gao, Y.; Liu, Z. B.; Sun, D. M.; Huang, L.; Ma, L. P.; Yin, L. C.; Ma, T.; Zhang, Z. Y.; Ma, X. L.; Peng, L. M. et al. Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils. Nat. Commun. 2015, 6, 8569.
Duan, X. D.; Wang, C.; Shaw, J. C.; Cheng, R.; Chen, Y.; Li, H. L.; Wu, X. P.; Tang, Y.; Zhang, Q. L.; Pan, A. L. et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol. 2014, 9, 1024–1030.
Wang, M. H.; Huang, M.; Luo, D.; Li, Y. Q.; Choe, M.; Seong, W. K.; Kim, M.; Jin, S.; Wang, M. R.; Chatterjee, S. et al. Single-crystal, large-area, fold-free monolayer graphene. Nature 2021, 596, 519–524.
Xu, X. Z.; Zhang, Z. H.; Qiu, L.; Zhuang, J. N.; Zhang, L.; Wang, H.; Liao, C. N.; Song, H. D.; Qiao, R. X.; Gao, P. et al. Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply. Nat. Nanotechnol. 2016, 11, 930–935.
Wang, J. H.; Xu, X. Z.; Cheng, T.; Gu, L. H.; Qiao, R. X.; Liang, Z. H.; Ding, D. D.; Hong, H.; Zheng, P. M.; Zhang, Z. B. et al. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire. Nat. Nanotechnol. 2022, 17, 33–38.
Li, T. T.; Guo, W.; Ma, L.; Li, W. S.; Yu, Z. H.; Han, Z.; Gao, S.; Liu, L.; Fan, D. X.; Wang, Z. X. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 2021, 16, 1201–1207.
Chen, T. A.; Chuu, C. P.; Tseng, C. C.; Wen, C. K.; Wong, H. S. P.; Pan, S. Y.; Li, R. T.; Chao, T. A.; Chueh, W. C.; Zhang, Y. F. et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 2020, 579, 219–223.
Zhang, Y. S.; Shi, J. P.; Han, G. F.; Li, M. J.; Ji, Q. Q.; Ma, D. L.; Zhang, Y.; Li, C.; Lang, X. Y.; Zhang, Y. F. et al. Chemical vapor deposition of monolayer WS2 nanosheets on Au foils toward direct application in hydrogen evolution. Nano Res. 2015, 8, 2881–2890.
Zhang, Y.; Zhang, Y. F.; Ji, Q. Q.; Ju, J.; Yuan, H. T.; Shi, J. P.; Gao, T.; Ma, D. L.; Liu, M. X.; Chen, Y. B. et al. Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary. ACS Nano 2013, 7, 8963–8971.
Huang, X. C.; Guan, J. Q.; Lin, Z. J.; Liu, B.; Xing, S. Y.; Wang, W. H.; Guo, J. D. Epitaxial growth and band structure of Te film on graphene. Nano Lett. 2017, 17, 4619–4623.
Zhu, Z. L.; Cai, X. L.; Yi, S.; Chen, J. L.; Dai, Y. W.; Niu, C. Y.; Guo, Z. X.; Xie, M. H.; Liu, F.; Cho, J. H. et al. Multivalency-driven formation of Te-based monolayer materials: A combined first-principles and experimental study. Phys. Rev. Lett. 2017, 119, 106101.
Coker, A.; Lee, T.; Das, T. P. Investigation of the electronic properties of tellurium-energy-band structure. Phys. Rev. B 1980, 22, 2968–2975.
Wang, Y. X.; Qiu, G.; Wang, R. X.; Huang, S. Y.; Wang, Q. X.; Liu, Y. Y.; Du, Y. C.; Goddard, W. A.; Kim, M. J.; Xu, X. F. et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 2018, 1, 228–236.
Tong, L.; Huang, X. Y.; Wang, P.; Ye, L.; Peng, M.; An, L. C.; Sun, Q. D.; Zhang, Y.; Yang, G. M.; Li, Z. et al. Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature. Nat. Commun. 2020, 11, 2308.
Qiu, G.; Niu, C.; Wang, Y. X.; Si, M. W.; Zhang, Z. C.; Wu, W. Z.; Ye, P. D. Quantum hall effect of weyl fermions in n-type semiconducting tellurene. Nat. Nanotechnol. 2020, 15, 585–591.
Wang, Y.; Xiao, C. C.; Chen, M. G.; Hua, C. Q.; Zou, J. D.; Wu, C.; Jiang, J. Z.; Yang, S. A.; Lu, Y. H.; Ji, W. Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers. Mater. Horiz. 2018, 5, 521–528.
Wang, Y. X.; Yao, S. K.; Liao, P. L.; Jin, S. Y.; Wang, Q. X.; Kim, M. J.; Cheng, G. J.; Wu, W. Z. Strain-engineered anisotropic optical and electrical properties in 2D chiral-chain tellurium. Adv. Mater. 2020, 32, 2002342.
Shen, C. F.; Liu, Y. H.; Wu, J. B.; Xu, C.; Cui, D. Z.; Li, Z.; Liu, Q. Z.; Li, Y. R.; Wang, Y. X.; Cao, X. et al. Tellurene photodetector with high gain and wide bandwidth. ACS Nano 2020, 14, 303–310.
Safdar, M.; Zhan, X. Y.; Niu, M. T.; Mirza, M.; Zhao, Q.; Wang, Z. X.; Zhang, J. P.; Sun, L. F.; He, J. Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters. Nanotechnology 2013, 24, 185705.
Wang, Q. S.; Safdar, M.; Xu, K.; Mirza, M.; Wang, Z. X.; He, J. Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets. ACS Nano 2014, 8, 7497–7505.
Krusin-Elbaum, L.; Cabral Jr, C.; Chen, K. N.; Copel, M.; Abraham, D. W.; Reuter, K. B.; Rossnagel, S. M.; Bruley, J.; Deline, V. R. Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress. Appl. Phys. Lett. 2007, 90, 141902.
Chen, K. N.; Cabral, C.; Krusin-Elbaum, L. Thermal stress effects of Ge2Sb2Te5 phase change material: Irreversible modification with Ti adhesion layers and segregation of Te. Microelectron. Eng. 2008, 85, 2346–2349.
Rinaldi, C.; Varotto, S.; Asa, M.; Slawińska, J.; Fujii, J.; Vinai, G.; Cecchi, S.; Di Sante, D.; Calarco, R.; Vobornik, I. et al. Ferroelectric control of the spin texture in GeTe. Nano Lett. 2018, 18, 2751–2758.
Di Sante, D.; Barone, P.; Bertacco, R.; Picozzi, S. Electric control of the giant rashba effect in bulk GeTe. Adv. Mater. 2013, 25, 509–513.
Liebmann, M.; Rinaldi, C.; Di Sante, D.; Kellner, J.; Pauly, C.; Wang, R. N.; Boschker, J. E.; Giussani, A.; Bertoli, S.; Cantoni, M. et al. Giant rashba-type spin splitting in ferroelectric GeTe(111). Adv. Mater. 2016, 28, 560–565.
Callen, H. B. Electronic structure, infrared absorption, and hall effect in tellurium. J. Chem. Phys. 1954, 22, 518–522.
von Hippel, A. Structure and conductivity in the VIb, group of the periodic system. J. Chem. Phys. 1948, 16, 372–380.
Du, Y. C.; Qiu, G.; Wang, Y. X.; Si, M. W.; Xu, X. F.; Wu, W. Z.; Ye, P. D. One-dimensional van der waals material tellurium: Raman spectroscopy under strain and magneto-transport. Nano Lett. 2017, 17, 3965–3973.
Tong, F.; Liu, J. D.; Cheng, X. M.; Hao, J. H.; Gao, G. Y.; Tong, H.; Miao, X. S. Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film. Thin Solid Films 2014, 568, 70–73.
Xie, Z. J.; Xing, C. Y.; Huang, W. C.; Fan, T. J.; Li, Z. J.; Zhao, J. L.; Xiang, Y. J.; Guo, Z. N.; Li, J. Q.; Yang, Z. G. et al. Ultrathin 2D nonlayered tellurium nanosheets: Facile liquid-phase exfoliation, characterization, and photoresponse with high performance and enhanced stability. Adv. Funct. Mater. 2018, 28, 1705833.
Andrikopoulos, K. S.; Yannopoulos, S. N.; Voyiatzis, G. A.; Kolobov, A. V.; Ribes, M.; Tominaga, J. Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition. J. Phys. Condens. Matter 2006, 18, 965–979.
Andrikopoulos, K. S.; Yannopoulos, S. N.; Kolobov, A. V.; Fons, P.; Tominaga, J. Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials. J. Phys. Chem. Solids 2007, 68, 1074–1078.
Qin, J. K.; Liao, P. Y.; Si, M. W.; Gao, S. Y.; Qiu, G.; Jian, J.; Wang, Q. X.; Zhang, S. Q.; Huang, S. Y.; Charnas, A. et al. Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes. Nat. Electron. 2020, 3, 141–147.
Kriegner, D.; Springholz, G.; Richter, C.; Pilet, N.; Müller, E.; Capron, M.; Berger, H.; Holý, V.; Dil, J. H.; Krempaský, J. Ferroelectric self-poling in GeTe films and crystals. Crystals 2019, 9, 335.
Wang, X. J.; Zhou, L. J.; Feng, J. L.; Wang, S.; Qian, H.; Tong, H.; Miao, X. S. Self-screening induced abnormal stability of ferroelectric phase in GeTe ultrathin films. Appl. Phys. Lett. 2018, 113, 232903.
Fons, P.; Kolobov, A. V.; Krbal, M.; Tominaga, J.; Andrikopoulos, K. S.; Yannopoulos, S. N.; Voyiatzis, G. A.; Uruga, T. Phase transition in crystalline GeTe: Pitfalls of averaging effects. Phys. Rev. B 2010, 82, 155209.
Bahl, S. K.; Chopra, K. L. Amorphous versus crystalline GeTe films. II. Optical properties. J. Appl. Phys. 1969, 40, 4940–4947.
Edwards, A. H.; Pineda, A. C.; Schultz, P. A.; Martin, M. G.; Thompson, A. P.; Hjalmarson, H. P. Theory of persistent, p-type, metallic conduction in c-GeTe. J. Phys. Condens. Matter 2005, 17, L329–L335.
Edwards, A. H.; Pineda, A. C.; Schultz, P. A.; Martin, M. G.; Thompson, A. P.; Hjalmarson, H. P.; Umrigar, C. J. Electronic structure of intrinsic defects in crystalline germanium telluride. Phys. Rev. B 2006, 73, 045210.
Amani, M.; Tan, C. L.; Zhang, G.; Zhao, C. S.; Bullock, J.; Song, X. H.; Kim, H.; Shrestha, V. R.; Gao, Y.; Crozier, K. B. et al. Solution-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors. ACS Nano 2018, 12, 7253–7263.
Acknowledgements
This work was supported by the National Key Research and Development Program of China (No. 2018YFA0703700), the National Natural Science Foundation of China (Nos. 91964203 and 61974036), the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB44000000), and the CAS Key Laboratory of Nanosystem and Hierarchical Fabrication. The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.
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Yao, Y., Zhan, X., Ding, C. et al. One-step method to simultaneously synthesize separable Te and GeTe nanosheets. Nano Res. 15, 6736–6742 (2022). https://doi.org/10.1007/s12274-022-4330-6
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DOI: https://doi.org/10.1007/s12274-022-4330-6