Abstract
Atomically thin black phosphorus, also known as phosphorene, is an emerging two-dimensional (2D) material, which has attracted increasing attention due to its unique electronic and optoelectronic properties. However, the reduced thermal stability of phosphorene limits its suitability for high-temperature fabrication processes, which could be detrimental for the performance of phosphorenebased devices. Here, we investigate the impact of doping by Al and Hf transition metal adatoms on the thermal stability of phosphorene. The formation of Al–P covalent bonds was found to significantly improve the thermal coefficients of the A 1g , B2g, and A 2g phonon modes to 0.00044, 0.00081, and 0.00012 cm–1·°C–1, respectively, which are two orders of magnitude lower than those observed for pristine P–P bonds (~0.01 cm–1·°C–1). First-principles calculations within the density functional theory framework reveal that the observed thermal stability enhancement in the Al-doped material reflects a significantly higher Al binding energy, due to the stronger Al–P bonds compared to the weak van der Waals interactions between adjacent P atoms in the undoped material. The present work thus paves the way towards phosphorene materials with improved structural stability, which could be promising candidates for potential nanoelectronic and optoelectronic applications.
Similar content being viewed by others
References
Bridgman, P. W. Two new modifications of phosphorus. J. Am. Chem. Soc. 1914, 36, 1344–1363.
Warschauer, D. Electrical and optical properties of crystalline black phosphorus. J. Appl. Phys. 1963, 34, 1853–1860.
Narita, S.; Akahama, Y.; Tsukiyama, Y.; Muro, K.; Mori, S.; Endo, S.; Taniguchi, M.; Seki, M.; Suga, S.; Mikuni, A. et al. Electrical and optical properties of black phosphorus single crystals. Physica B+C 1983, 117–118, 422–424.
Maruyama, Y.; Suzuki, S.; Kobayashi, K.; Tanuma, S. Synthesis and some properties of black phosphorus single crystals. Physica B+C 1981, 105, 99–102.
Wang, X. M.; Jones, A. M.; Seyler, K. L.; Tran, V.; Jia, Y. C.; Zhao, H.; Wang, H.; Yang, L.; Xu, X. D.; Xia, F. N. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol. 2015, 10, 517–521.
Baba, M.; Nakamura, Y.; Takeda, Y.; Shibata, K.; Morita, A.; Koike, Y.; Fukase, T. Hall effect and two-dimensional electron gas in black phosphorus. J. Phys.: Condens. Mat. 1992, 4, 1535–1544.
Shulenburger, L.; Baczewski, A. D.; Zhu, Z.; Guan, J.; Tomá nek, D. The nature of the interlayer interaction in bulk and few-layer phosphorus. Nano Lett. 2015, 15, 8170–8175.
Li, L. K.; Yu, Y.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372–377.
Koenig, S. P.; Doganov, R. A.; Schmidt, H.; Neto, A. C.; Özyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 2014, 104, 103106.
Xia, F. N.; Wang, H.; Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 2014, 5, 4458.
Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 2014, 14, 3347–3352.
Youngblood, N.; Chen, C.; Koester, S. J.; Li, M. Waveguideintegrated black phosphorus photodetector with high responsivity and low dark current. Nat. Photonics 2015, 9, 247–252.
Buscema, M.; Groenendijk, D. J.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. Photovoltaic effect in few-layer black phosphorus PNjunctions defined by local electrostatic gating. Nat. Commun. 2014, 5, 4651.
Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X. F.; Tománek, D.; Ye, P. D. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 2014, 8, 4033–4041.
Das, S.; Demarteau, M.; Roelofs, A. Ambipolar phosphorene field effect transistor. ACS Nano 2014, 8, 11730–11738.
Xiang, D.; Han, C.; Wu, J.; Zhong, S.; Liu, Y. Y.; Lin, J. D.; Zhang, X.-A.; Hu, W. P.; Özyilmaz, B.; Neto, A. H. C. et al. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus. Nat. Commun. 2015, 6, 6485.
Kulish, V. V.; Malyi, O. I.; Persson, C.; Wu, P. Adsorption of metal adatoms on single-layer phosphorene. Phys. Chem. Chem. Phys. 2015, 17, 992–1000.
Sugai, S.; Shirotani, I. Raman and infrared reflection spectroscopy in black phosphorus. Solid State Commun. 1985, 53, 753–755.
Fei, R. X.; Yang, L. Lattice vibrational modes and Raman scattering spectra of strained phosphorene. Appl. Phys. Lett. 2014, 105, 083120.
Castellanos-Gomez, A.; Vicarelli, L.; Prada, E.; Island, J. O.; Narasimha-Acharya, K. L.; Blanter, S. I.; Groenendijk, D. J.; Buscema, M.; Steele, G. A.; Alvarez, J. V. et al. Isolation and characterization of few-layer black phosphorus. 2D Mater. 2014, 1, 025001.
Lu, W. L.; Nan, H. Y.; Hong, J. H.; Chen, Y. M.; Zhu, C.; Liang, Z.; Ma, X. Y.; Ni, Z. H.; Jin, C. H.; Zhang, Z. Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res. 2014, 7, 853–859.
Su, L. Q.; Zhang, Y. Temperature coefficients of phonon frequencies and thermal conductivity in thin black phosphorus layers. Appl. Phys. Lett. 2015, 107, 071905.
Zhang, S.; Yang, J.; Xu, R. J.; Wang, F.; Li, W. F.; Ghufran, M.; Zhang, Y.-W.; Yu, Z. F.; Zhang, G.; Qin, Q. H. et al. Extraordinary photoluminescence and strong temperature/ angle-dependent Raman responses in few-layer phosphorene. ACS Nano 2014, 8, 9590–9596.
Late, D. J. Temperature dependent phonon shifts in few-layer black phosphorus. ACS Appl. Mater. Interfaces 2015, 7, 5857–5862.
Late, D. J.; Maitra, U.; Panchakarla, L. S.; Waghmare, U. V.; Rao, C. N. R. Temperature effects on the Raman spectra of graphenes: Dependence on the number of layers and doping. J. Phys.: Condens. Mat. 2011, 23, 055303.
Lanzillo, N. A.; Birdwell, A. G.; Amani, M.; Crowne, F. J.; Shah, P. B.; Najmaei, S.; Liu, Z.; Ajayan, P. M.; Lou, J.; Dubey, M. et al. Temperature-dependent phonon shifts in monolayer MoS2. Appl. Phys. Lett. 2013, 103, 093102.
Late, D. J.; Shirodkar, S. N.; Waghmare, U. V.; Dravid, V. P.; Rao, C. N. R. Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2. ChemPhysChem 2014, 15, 1592–1598.
Zouboulis, E. S.; Grimsditch, M. Raman scattering in diamond up to 1900 K. Phys. Rev. B 1991, 43, 12490–12493.
Giannozzi, P.; Baroni, S.; Bonini, N.; Calandra, M.; Car, R.; Cavazzoni, C.; Ceresoli, D.; Chiarotti, G. L.; Cococcioni, M.; Dabo, I. et al. Quantum espresso: A modular and open-source software project for quantum simulations of materials. J. Phys.: Condes. Mat. 2009, 21, 395502.
Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 1994, 50, 17953–17979.
Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865–3868.
Sui, X. L.; Si, C.; Shao, B.; Zou, X. L.; Wu, J.; Gu, B.-L.; Duan, W. H. Tunable magnetism in transition-metal-decorated phosphorene. J. Phys. Chem. C 2015, 119, 10059–10063.
Cordero, B.; Gómez, V.; Platero-Prats, A. E.; Revés, M.; Echeverría, J.; Cremades, E.; Barragán, F.; Alvarez, S. Covalent radii revisited. Dalton Trans. 2008, 2832–2838.
Gamoke, B.; Neff, D.; Simons, J. Nature of PObonds in phosphates. J. Phys. Chem. A 2009, 113, 5677–5684.
Goodman, N. B.; Ley, L.; Bullett, D. W. Valence-band structures of phosphorus allotropes. Phys. Rev. B 1983, 27, 7440–7450.
Harada, Y.; Murano, K.; Shirotani, I.; Takahashi, T.; Maruyama, Y. Electronic structure of black phosphorus studied by X-ray photoelectron spectroscopy. Solid State Commun. 1982, 44, 877–879.
Rokugawa, H.; Adachi, S. Investigation of rapid thermally annealed gap(001) surfaces in vacuum. Surf. Interface Anal. 2010, 42, 88–94.
Millard, M. M.; Foy, C. D.; Coradetti, C. A.; Reinsel, M. D. X-ray photoelectron spectroscopy surface analysis of aluminum ion stress in barley roots. Plant Physiol. 1990, 93, 578–583.
Author information
Authors and Affiliations
Corresponding author
Electronic supplementary material
Rights and permissions
About this article
Cite this article
Feng, X., Kulish, V.V., Wu, P. et al. Anomalously enhanced thermal stability of phosphorene via metal adatom doping: An experimental and first-principles study. Nano Res. 9, 2687–2695 (2016). https://doi.org/10.1007/s12274-016-1156-0
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12274-016-1156-0