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Nano Research

, Volume 9, Issue 8, pp 2319–2326 | Cite as

Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures

  • Dongri Qiu
  • Dong Uk Lee
  • Kyoung Su Lee
  • Sang Woo Pak
  • Eun Kyu KimEmail author
Research Article

Abstract

Two-dimensional (2D) crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals (vdW) heterostructures. Recently, artificially-stacked materials have been considered promising candidates for nanoelectronic and optoelectronic applications. In this study, we report the vertical integration of layered structures for the fabrication of prototype non-volatile memory devices. A semiconducting-tungsten-disulfide-channel-based memory device is created by sandwiching high-density-of-states multi-layered graphene as a carrier-confining layer between tunnel barriers of hexagonal boron nitride (hBN) and silicon dioxide. The results reveal that a memory window of up to 20 V is opened, leading to a high current ratio (>103) between programming and erasing states. The proposed design combination produced layered materials that allow devices to attain perfect retention at 13% charge loss after 10 years, offering new possibilities for the integration of transparent, flexible electronic systems.

Keywords

two-dimensional (2D) material graphene hexagonal boron nitride (hBN) tungsten disulphide (WS)2 heterostructure 

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Supplementary material

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  • Dongri Qiu
    • 1
  • Dong Uk Lee
    • 2
  • Kyoung Su Lee
    • 1
  • Sang Woo Pak
    • 1
  • Eun Kyu Kim
    • 1
    Email author
  1. 1.Quantum-Function Research Laboratory and Department of PhysicsHanyang UniversitySeoulRepublic of Korea
  2. 2.NAND Development DivisionNAND Product Engineering Group, SK HynixIcheonRepublic of Korea

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