Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures
- 299 Downloads
Two-dimensional (2D) crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals (vdW) heterostructures. Recently, artificially-stacked materials have been considered promising candidates for nanoelectronic and optoelectronic applications. In this study, we report the vertical integration of layered structures for the fabrication of prototype non-volatile memory devices. A semiconducting-tungsten-disulfide-channel-based memory device is created by sandwiching high-density-of-states multi-layered graphene as a carrier-confining layer between tunnel barriers of hexagonal boron nitride (hBN) and silicon dioxide. The results reveal that a memory window of up to 20 V is opened, leading to a high current ratio (>103) between programming and erasing states. The proposed design combination produced layered materials that allow devices to attain perfect retention at 13% charge loss after 10 years, offering new possibilities for the integration of transparent, flexible electronic systems.
Keywordstwo-dimensional (2D) material graphene hexagonal boron nitride (hBN) tungsten disulphide (WS)2 heterostructure
Unable to display preview. Download preview PDF.
- Georgiou, T.; Jalil, R.; Belle, B. D.; Britnell, L.; Gorbachev, R. V.; Morozov, S. V.; Kim, Y. J.; Gholinia, A.; Haigh, S. J.; Makarovsky, O. et al. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 2013, 8, 100–103.CrossRefGoogle Scholar
- Sik Hwang, W.; Remskar, M.; Yan, R. S.; Protasenko, V.; Tahy, K.; Doo Chae, S.; Zhao, P.; Konar, A.; Xing, H.; Seabaugh, A. et al. Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Appl. Phys. Lett. 2012, 101, 013107.CrossRefGoogle Scholar
- Brainard, W. A. The Thermal Stability and Friction of the Disulfides, Diselenides, and Ditellurides of Molybdenum and Tungsten in Vacuum (10–9 to 10–6 Torr). NASA, Washington, 1969.Google Scholar
- Ballif, C.; Regula, M.; Schmid, P. E.; Remškar, M.; Sanjinés, R.; Lévy, F. Preparation and characterization of highly oriented, photoconducting WS2 thin films. Appl. Phys. A 1996, 62, 543–546.Google Scholar
- Brewer, J.; Gill, M. Nonvolatile Memory Technologies with Emphasis on Flash; Wiley-IEEE Press: Piscataway, NJ, 2008.Google Scholar
- Yan, R. S.; Zhang, Q.; Li, W.; Calizo, I.; Shen, T.; Richter, C. A.; Hight-Walker, A. R.; Liang, X. L.; Seabaugh, A.; Jena, D. et al. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy. Appl. Phys. Lett. 2012, 101, 022105.CrossRefGoogle Scholar
- Schroder, D. K. Semiconductor Material and Device Characterization, 3rd ed.; John Wiley & Sons: Hoboken, NJ, 2006.Google Scholar