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Piezoresistive effect in MoO3 nanobelts and its application in strain-enhanced oxygen sensors

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Abstract

MoO3 nanobelts (NBs) having different properties have been synthesized via a physical vapor deposition (PVD) method. The crystallographic structures and morphologies of the NBs were characterized by X-ray diffraction, transmission electron microscopy and scanning electron microscopy. Electrical measurements were performed and the profound piezoresistive effect in MoO3 experimentally studied and verified. Factors that influence the gauge factor, such as NB size, doping concentration and atmosphere composition, are discussed and analyzed. Gas sensing performance was also tested in devices and it was demonstrated that by applying strain to the gas sensor, its sensing performance could be effectively tuned and enhanced. This study provides the first demonstration of significant piezoresistivity in MoO3 NBs and the first illustration of a generic mechanism by means of which this effect can be coupled with other electronic modulation measures to afford better device performance and broader material functionality.

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Authors and Affiliations

  1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332-0245, USA

    Xiaonan Wen, Weiqing Yang, Yong Ding, Simiao Niu & Zhong Lin Wang

  2. State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Weiqing Yang

  3. Satellite Lab., MANA, WPI, National Institute of Materials Science, Ibaraki, Japan

    Zhong Lin Wang

Authors
  1. Xiaonan Wen
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  2. Weiqing Yang
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  4. Simiao Niu
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Correspondence to Zhong Lin Wang.

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These authors contributed equally to this work.

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Wen, X., Yang, W., Ding, Y. et al. Piezoresistive effect in MoO3 nanobelts and its application in strain-enhanced oxygen sensors. Nano Res. 7, 180–189 (2014). https://doi.org/10.1007/s12274-013-0385-8

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  • DOI: https://doi.org/10.1007/s12274-013-0385-8

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