Nano Research

, Volume 2, Issue 12, pp 931–937 | Cite as

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

  • Joanne W. L. Yim
  • Deirdre Chen
  • Gregory F. Brown
  • Junqiao Wu
Open Access
Research Article

Abstract

We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.

Keywords

Aspect ratio doping nanowires zinc selenide zinc telluride 

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Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2009

Authors and Affiliations

  • Joanne W. L. Yim
    • 1
    • 2
  • Deirdre Chen
    • 1
  • Gregory F. Brown
    • 1
    • 2
  • Junqiao Wu
    • 1
    • 2
  1. 1.Department of Materials Science and EngineeringUniversity of CaliforniaBerkeleyUSA
  2. 2.Lawrence Berkeley National LaboratoryMaterials Sciences DivisionBerkeleyUSA

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