Abstract
Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License ( https://creativecommons.org/licenses/by-nc/2.0 ), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Han, X., Jing, G., Zhang, X. et al. Bending-induced conductance increase in individual semiconductor nanowires and nanobelts. Nano Res. 2, 553–557 (2009). https://doi.org/10.1007/s12274-009-9053-4
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DOI: https://doi.org/10.1007/s12274-009-9053-4