Nano Research

, Volume 2, Issue 7, pp 553–557 | Cite as

Bending-induced conductance increase in individual semiconductor nanowires and nanobelts

  • Xiaobing Han
  • Guangyin Jing
  • Xinzheng Zhang
  • Renmin Ma
  • Xuefeng Song
  • Jun Xu
  • Zhimin Liao
  • Ning Wang
  • Dapeng Yu
Open Access
Research Article

Abstract

Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

Keywords

ZnO nanowires bending strain piezoresistance conductance enhancement 

References

  1. [1]
    Li, Y.; Meng, G. W.; Zhang, L. D.; Phillip, F. Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. Appl. Phys. Lett. 2000, 76, 2011–2013.CrossRefADSGoogle Scholar
  2. [2]
    Kong, Y. C.; Yu, D. P.; Zhang, B.; Fang, W.; Feng, S. Q. Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach. Appl. Phys. Lett. 2001, 78, 407–409.CrossRefADSGoogle Scholar
  3. [3]
    Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. D. Room-temperature ultraviolet nanowire nanolasers. Science 2001, 292, 1897–1899.CrossRefPubMedADSGoogle Scholar
  4. [4]
    He, R.; Yang, P. D. Giant piezoresistance effect in silicon nanowires. Nat. Nanotechnol. 2006, 1, 42–46.CrossRefPubMedADSGoogle Scholar
  5. [5]
    Wang, X.; Zhou, J.; Song, J.; Liu, J.; Xu, N.; Wang, Z. L. Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire. Nano Lett. 2006, 6, 2768–2772.CrossRefPubMedADSGoogle Scholar
  6. [6]
    Bai, X.; Golberg, D.; Bando, Y.; Zhi, C.; Tang, C.; Mitome, M.; Kurashima, K. Deformation-driven electrical transport of individual boron nitride nanotubes. Nano Lett. 2007, 7, 632–637.CrossRefPubMedADSGoogle Scholar
  7. [7]
    Lin, X.; He, X. B.; Yang, T. Z.; Guo, W.; Shi, D. X.; Gao, H. J.; Ma, D. D. D.; Lee, S. T.; Liu, F.; Xie, X. C. Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire. Appl. Phys. Lett. 2006, 89, 043103.Google Scholar
  8. [8]
    Wang, Z. L.; Song, J. Piezoelectric nanogenerators based on zinc oxide nanowire arrays. Science 2006, 312, 242–246.CrossRefPubMedADSGoogle Scholar
  9. [9]
    Zhou, J.; Gu, Y.; Fei, P.; Mai, W.; Gao, Y.; Yang, R.; Bao, G.; Wang, Z. L. Flexible piezotronic strain sensor. Nano Lett. 2008, 8, 3035–3040.CrossRefPubMedADSGoogle Scholar
  10. [10]
    Zhou, J.; Fei, P.; Gu, Y.; Mai, W.; Gao, Y.; Yang, R.; Bao, G.; Wang, Z. L. Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires. Nano Lett. 2008, 8, 3973–3977.CrossRefPubMedADSGoogle Scholar
  11. [11]
    Zhang, Y.; Jia, H. B.; Chen, C. P.; Yu, D. P.; Lee, C. J. Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate. Appl. Phys. Lett. 2003, 83, 4631–4633.CrossRefADSGoogle Scholar
  12. [12]
    Sun, Y.; Thompson, S. E.; Nishida, T. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 2007, 101, 104503.Google Scholar

Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2009

Authors and Affiliations

  • Xiaobing Han
    • 1
  • Guangyin Jing
    • 1
  • Xinzheng Zhang
    • 1
  • Renmin Ma
    • 1
  • Xuefeng Song
    • 1
  • Jun Xu
    • 1
  • Zhimin Liao
    • 1
  • Ning Wang
    • 2
  • Dapeng Yu
    • 1
  1. 1.State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of PhysicsPeking UniversityBeijingChina
  2. 2.Physics DepartmentHong Kong University of Science and TechnologyHong KongChina

Personalised recommendations