Abstract
Superlattice structures resulting from vacancy ordering have been observed in many materials. Here we report vacancy ordering behavior in III2VI3 nanowires. The formation of layer-like structural vacancies has been achieved during the synthesis of In2Se3 nanowires through a vapor-transport route. Doping In2Se3 nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for (In x Ga1−x )2Se3 nanowires. Lithium atoms can fill in the layer-like structural vacancies of In2Se3 nanowires and generate new types of vacancy and lithium atom ordering superlattices. The screw-patterned vacancies of (In x Ga1−x )2Se3 nanowires show reversible lithium insertion. Our results contribute to the understanding of structure property correlations of III2VI3 materials used in lithium ion storage, photovoltaics, and phase change memory.
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Peng, H., Zhang, X.F., Twesten, R.D. et al. Vacancy ordering and lithium insertion in III2VI3 nanowires. Nano Res. 2, 327–335 (2009). https://doi.org/10.1007/s12274-009-9030-y
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DOI: https://doi.org/10.1007/s12274-009-9030-y