Computational model of edge effects in graphene nanoribbon transistors
- 1.1k Downloads
We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon field-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a significant effect on the quantum capacitance and ballistic I-V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.
KeywordsGraphene nanoribbon field-effect transistor edge bond relaxation third nearest neighbor interaction edge scattering
- Gunlycke, D.; White, C. T. Tight-binding energy dispersions of armchair-edge graphene nanostrips. Phys. Rev. B 2008, 77, 115116.Google Scholar
- Son, Y. W.; Cohen, M.; Louie, S. Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 2006, 97, 216803.Google Scholar
- Sasaki, K.; Murakami, S.; Saito, R. Stabilization mechanism of edge states in graphene. Appl. Phys. Lett. 2006, 88, 113110.Google Scholar
- Lundstrom, M.; Guo, J. Nanoscale Transistors: Device Physics, Modeling and Simulation; Springer: New York, 2006.Google Scholar
- Wong, H.-S. P.; Deng, J.; Hazeghi, A. Krishnamohan, T.; Wan, G. C. Carbon nanotube transistor circuits: Models and tools for design and performance optimization. Proc. Intl. Conf. Computer-aided Design 2006, p. 651.Google Scholar
- Ouyang, Y.; Yoon, Y.; Fodor, J.; Guo, J. Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors. Appl. Phys. Lett. 2006, 89, 203107.Google Scholar
- Liang, G. C.; Neophytou, N.; Lundstrom, M.; Nikonov, D. E. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation. J. Appl. Phys. 2007, 102, 054307.Google Scholar
- Guan, X.; Zhang, M.; Liu, Q.; Yu, Z. Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method. IEDM Tech. Dig. 2007, 761–764.Google Scholar
- Wang, X.; Ouyang, Y.; Li, X.; Wang, H.; Guo, J.; Dai, H. Room temperature all semiconducting sub-10 nm graphene nanoribbon FETs. Phys. Rev. Lett. 2008, 100, 206803.Google Scholar
- Perebeinos, V.; Tersoff, J.; Avouris, P. Electron-phonon interaction and transport in semiconducting carbon nanotubes. Phys. Rev. Lett. 2005, 94, 086802.Google Scholar
- Han, M. Y.; Ozyilmaz, B.; Zhang, Y.; Kim, P. Energy bandgap engineering of graphene nanoribbons. Phys. Rev. Lett. 2007, 98, 206805.Google Scholar
- Fast Field Solvers. http://www.fastfieldsolvers.com (accessed 2008).