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Wafer size effect on material removal rate in copper CMP process

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Abstract

The semiconductor industry has employed the Chemical mechanical planarization (CMP) to enable surface topography control. Copper has been used to build interconnects because of its low-resistivity and high-electromigration. In this study, the effect of wafer size on the Material removal rate (MRR) in copper CMP process was investigated. CMP experiments were conducted using copper blanket wafers with diameter of 100, 150, 200 and 300 mm, while temperature and friction force were measured by infrared and piezoelectric sensors. The MRR increases with an increase in wafer size under the same process conditions. The wafer size increased the sliding distance of pad, resulting in an increase in the process temperature. This increased the process temperature, accelerating the chemical etching rate and the dynamic etch rate. The sliding distance of the pad was proportional to the square of the wafer radius; it may be used to predict CMP results and design a CMP machine.

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Authors and Affiliations

  1. School of Mechanical Engineering, Pusan National University, Busan, 46241, Korea

    Minjong Yuh, Soocheon Jang, Inho Park & Haedo Jeong

Authors
  1. Minjong Yuh
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  2. Soocheon Jang
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  3. Inho Park
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  4. Haedo Jeong
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Corresponding author

Correspondence to Haedo Jeong.

Additional information

Recommended by Associate Editor Hyung Wook Park

Minjong Yuh received his B.S. and M.S. degrees in Mechanical Engineering from Pusan National University, Busan, Korea. He is currently a Ph.D. student in Mechanical Engineering from the same university. His research interest includes CMP process of semiconductors.

Soocheon Jang received his M.S. degrees in Mechanical Engineering from Pusan National University, Busan, Korea. He is currently a Ph.D. student in Mechanical Engineering from the same university. His research interest includes CMP process of semiconductors.

Inho Park is M.S. student of Mechanical Engineering, Pusan National University, Busan, Korea. He received his B.S. degree in Tongmyong University. His research interest includes CMP process of semiconductors.

Haedo Jeong is a Professor at the School of Mechanical Engineering at Pusan National University. He received his Ph.D. degree in Mechanical Engineering from Tokyo University, Japan in 1994. His research fields include CMP, grinding, polisher and consumables design, and post-CMP cleaning.

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Yuh, M., Jang, S., Park, I. et al. Wafer size effect on material removal rate in copper CMP process. J Mech Sci Technol 31, 2961–2964 (2017). https://doi.org/10.1007/s12206-017-0539-9

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  • DOI: https://doi.org/10.1007/s12206-017-0539-9

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