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Correction: Front. Optoelectron. 17, 8 (2024)
https://doi.org/10.1007/s12200-024-00111-9
Following publication of the original article [1], the authors reported errors in the legend of Graphical Abstract, Figure 2 and Figure 3.
The Graphical Abstract has been updated from:
To:
Figure 2 has been updated from:
To:
Figure 3 has been updated from:
To:
The original article [1] has been updated.
Reference
Yin, J., Hwang, D., Siboni, H.Z., et al.: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 8 (2024). https://doi.org/10.1007/s12200-024-00111-9
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Yin, J., Hwang, D., Siboni, H. et al. Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 10 (2024). https://doi.org/10.1007/s12200-024-00114-6
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DOI: https://doi.org/10.1007/s12200-024-00114-6