Abstract
In this paper, Bi2S3 nanorods were successfully synthesized via a facile one-pot hydrothermal method and characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. Then the Bi2S3 nanorods were deposited on Au interdigital electrodes by dip-coating to fabricate photodetectors. The photoresponse properties using Bi2S3 nanorods as a representative system showed a significantly enhanced conductivity and the current-voltage (I-V) characteristic exhibited about ca. 2 orders of magnitude larger than the dark current. The response and decay time was estimated to be ~371.66 and 386 ms, respectively, indicating Bi2S3 may be an excellent candidate for high speed and high-sensitivity photoelectrical switches and light sensitive devices.
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Taotao Ding received the B.S. degree from School of Environmental and Chemical Engineering, Nanchang Hangkong University, China, in 2011. Now, he is working toward his Ph.D. degree in Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. His research interests include synthesis of nano-materials and their application in sensors and energy storage.
Yu Tian is a lecturer in School of Physics and Information Engineering, Jianghan University, China. She received the B.S. degree from Physics and Electronic Science Department, Luoyang Normal University, China, in 2004; and received the M.S.-Ph.D. degrees from Materials Physics and Chemistry, Wuhan University, China, in 2010. From 2010 - 2012, she was a postdoctor in Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. Her research interests include synthesis of ZnO nanowire and investigation of the defect in ZnO nanowire.
Jiangnan Dai is an associate professor in Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. He received the B. S. degree from Hunan University of Science and Technology, China, in 2002; received the M.S. and Ph.D. degrees from School of Materials Science and Engineering, Nanchang University, China, in 2004 and 2007 respectively. From 2008 - 2010, he was a postdoctor in Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. His research focuses on material growth and device fabrication of wide bandgap semiconductor (AlGaN, GaN, ZnO).
Changqing Chen is a proferssor in Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. He received the B.S. and M. S. degrees from Wuhan University, China, in 1992 and 1994 respectively; received the Ph.D. degrees from Shanghai Institute of Metallurgy, Academy of Sciences of China, China (in 1997) and University of Erlangen- Nürnberg, German (in 2000). From 2001 - 2004, he was a research scientist in Virginia Commonwealth University and University of South Carolina. His research focuses on semiconductors materials and devices including light-emitting diodes and photodetectors.
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Ding, T., Tian, Y., Dai, J. et al. Building one-dimensional Bi2S3 nanorods as enhanced photoresponding materials for photodetectors. Front. Optoelectron. 8, 282–288 (2015). https://doi.org/10.1007/s12200-015-0529-4
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DOI: https://doi.org/10.1007/s12200-015-0529-4