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SAGCM avalanche photodiode with additional layer and nonuniform electric field

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Abstract

This paper presents a new method to increase the speed of the separated absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD). This improvement is obtained by adding a new thin charge layer between absorption and grading layers, with assuming the non-uniform electric field in different regions of the structure. In addition, a circuit model of the proposed structure is extracted, using carrier rate equations. Also, to achieve the optimum structure, it is tried to have trade-offs among thickness of the layers and have proper tuning of physical parameters. Eventually, frequency and transient response are investigated and it is shown that, in comparison with the previous conventional structure, significant improvements in gain-bandwidth product, speed and also in breakdown voltage are attained.

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References

  1. Campbell J C. Recent advances in telecommunications avalanche photodiodes. Journal of Lightwave Technology, 2007, 25(1): 109–121

    Article  Google Scholar 

  2. Kasper B L, Campbell J C. Multigigbit-per-second avalanche photodiode lightwave receivers. Journal of Lightwave Technology, 1987, 5(10): 1351–1364

    Article  Google Scholar 

  3. Tarof L E, Yu J, Bruce R, Knight D G, Baird T, Oosterbrink B. High-frequency performance of separate absorption and multiplication InP/InGaAs avalanche photodiodes. IEEE Photonics Technology Letters, 1993, 5(6): 672–674

    Article  Google Scholar 

  4. Masudy-Panah S, Moravvej-Farshi M K, Jalali M. Temperature dependent characteristics of submicron GaAs avalanche photodiodes obtained by a nonlocal analysis. Journal of Optical Communications and Networking, 2009, 282(17): 3630–3636

    Article  Google Scholar 

  5. Liew S C, Tan C H, Goh Y L, Marshall A R J, David J P R. Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. Journal of Applied Physics, 2008, 104(19): 13114–13119

    Google Scholar 

  6. Banoushi A, Ahmadi V, Setayeshi S. An analytical approach to study the effect of carrier velocities on the gain and breakdown voltage of avalanche photodiodes. Journal of Lightwave Technology, 2002, 20(4): 696–699

    Article  Google Scholar 

  7. Ng B K, David J P R, Plimmer S A, Rees G J, Tozer R C, Hopkinson M, Hill G. Avalanche multiplication characteristics of Al0.8Ga0.2 As diodes. IEEE Transactions on Electron Devices, 2001, 48(10): 2198–2204

    Article  Google Scholar 

  8. Bandyopadhyay A, Deen M J, Tarof L E, Clark W A. Simplified approaches to time-domain modeling of avalanche photodiodes. IEEE Journal of Quantum Electronics, 1998, 34(4): 691–699

    Article  Google Scholar 

  9. Chen W, Liu S. PIN avalanche photodiodes model for circuit simulation. IEEE Journal of Quantum Electronics, 1998, 32(12): 2105–2111

    Article  Google Scholar 

  10. El-Batawy Y M, Deen M J. Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD). IEEE Transactions on Electron Devices, 2003, 50(3): 790–801

    Article  Google Scholar 

  11. El-Batawy Y M, Deen M J. Analysis and circuit modeling of waveguide-separated absorption charge multiplication-avalanche photodetector (WG-SACM-APD). IEEE Transactions on Electron Devices, 2005, 52(3): 335–344

    Article  Google Scholar 

  12. Banoushi A, Kardan M R, Naeini M A. A circuit model for separate absorption, grading, charge, and multiplication avalanche photodiodes. Solid-State Electronics, 2005, 49(6): 871–877

    Article  Google Scholar 

  13. Mai Y X, Wang G. Equivalent circuit modeling of separate absorption grading charge multiplication avalanche photodiode. Journal of Lightwave Technology, 2009, 27(9): 1197–1202

    Article  Google Scholar 

  14. Wang G, Wu J. A novel equivalent circuit model for separate absorption grading charge multiplication avalanche photodiode (APD)-based optical receiver. Journal of Lightwave Technology, 2010, 28(5): 784–790

    Article  Google Scholar 

  15. Zhao Y L, Mo Q Y. An equivalent circuit model for separate absorption grading charge multiplication avalanche photodiode. Journal of Physics: Conference Series, 2011, 276(1): 012107

    Article  Google Scholar 

  16. Plimmer S A, Tan C H, David J P R, Grey R, Li K F, Rees G J. The effect of an electric-field gradient on avalanche noise. Applied Physics Letters, 1999, 75(19): 2963–2965

    Article  Google Scholar 

  17. Saleh M A, Hayat M M, Sotirelis P P, Holmes A L, Campbell J C, Saleh B E A, Teich M C. Impact-ionization and noise characteristics of thin III-Vavalanche photodiodes. IEEE Transactions on Electron Devices, 2001, 48(12): 2722–2731

    Article  Google Scholar 

  18. Goh Y L, Massey D J, Marshall A R J, Ng J S, Tan C H, Ng W K, Rees G J, Hopkinson M, David J P R, Jones S K. Avalanche multiplication in InAlAs. IEEE Transactions on Electron Devices, 2007, 54(1): 11–16

    Article  Google Scholar 

  19. Masudy-Panah S, Ahmadi V. A closed form analytic model to study the characteristics of avalanche photodiodes. Journal of Modern Optics, 2009, 56(1): 67–72

    Article  Google Scholar 

  20. Kim D S, Lee S Y, Lee J H, Oh G S, Kim N J, Lee JW, Kim A S, Sin Y K. Fabrication of planar InP/InGaAs avalanche photodiode without guard rings. In: Proceedings of IEEE Lasers and Electro-Optics Society, Annual Meeting (LEOS 96). 1996, 332–333

    Chapter  Google Scholar 

  21. Tan L J J, Ng J S, Tan C H, David J P R. Avalanche noise characteristics in submicron InP diodes. IEEE Journal of Quantum Electronics, 2008, 44(4): 378–382

    Article  Google Scholar 

  22. Tarof L E, Knight D G, Fox K E, Miner C J, Puetz N, Kim H B. Planar InP/InGaAs avalanche photodetectors with a partial charge sheet in device periphery. Applied Physics Letters, 1990, 57(7): 670–672

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, 145151775, Iran

    Abbas Ghadimi

  2. Department of Electrical Engineering, Tarbiat Modares University, Tehran, 14115-194, Iran

    Vahid Ahmadi

  3. Department of Physics, Alzahra University, Tehran, 1993893973, Iran

    Fatemeh Shahshahani

Authors
  1. Abbas Ghadimi
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  2. Vahid Ahmadi
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  3. Fatemeh Shahshahani
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Corresponding authors

Correspondence to Abbas Ghadimi, Vahid Ahmadi or Fatemeh Shahshahani.

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Ghadimi, A., Ahmadi, V. & Shahshahani, F. SAGCM avalanche photodiode with additional layer and nonuniform electric field. Front. Optoelectron. 6, 199–209 (2013). https://doi.org/10.1007/s12200-013-0317-y

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  • DOI: https://doi.org/10.1007/s12200-013-0317-y

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