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Reflective spectrum broadened by nano-particle-network in chiral liquid crystals

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Abstract

Based on the analytical expression of the electromagnetic field solution of a helical symmetric dielectric material, the relationship between spectral reflectivity and birefringence of a chiral liquid crystal and the blue shift of the Bragg reflection in the condition of oblique incidence are presented in this paper. The theoretical results indicated that: 1) If birefringence (Δn) of the liquid crystal is greater than 0.2 and the thickness of the liquid crystal layer reaches 3 μm, the liquid crystal layer will reflect more than 90% of the incident light; 2) To reflect the whole visible spectrum by Bragg reflection, Δn of the liquid crystals in plane alignment state should exceed 0.6; 3) When the incident beam inclines to 60° from the normal direction, the blue shift of the reflective spectrum will reach to 100 nm. On the other hand, since the Δn of the commercial chiral liquid crystals is not larger than 0.2, to get the entire visible reflective spectrum, it needs to introduce a polymer network into the liquid crystals and make a sagging structure on the surface of substrates. The contribution of the network is to establish random anchorage that makes the pitch varied, hence broadening the Bragg reflection spectra. The random distribution of the sagging structure on the surface substrate is used to induce random screw axes of the chiral liquid crystal, which not only causes a blue shift of Bragg reflection but also further stretches the reflection spectra. Experiments demonstrated that the Bragg reflection spectrum could be broadened from 80 nm to more than 120 nm, and the contrast reaches 4:1 by introducing both polymer network and sagging structure on the substrate surface cell.

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Correspondence to Ziqiang Huang.

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Translated from Chinese Journal of Liquid Crystals and Displays, 2006, 21(1): 1–5 [译自: 液晶与显示]

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Huang, Z., Yang, W. & Wang, J. Reflective spectrum broadened by nano-particle-network in chiral liquid crystals. Front. Optoelectron. China 1, 188–191 (2008). https://doi.org/10.1007/s12200-008-0008-2

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  • DOI: https://doi.org/10.1007/s12200-008-0008-2

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