Abstract
Cobalt ferrite is one of the candidates from spinel ferrite family and can be termed as an active material in resistive random-access memory (RRAM) cell because of its excellent performance in switching devices. In this article, the review on the role of cobalt ferrite as an active insulator material for metal/insulator/metal (M/I/M) configuration is discussed. The mode of metal/CoFe\(_{2}\)O\(_{4}/\)metal memory cell depends on the electrode material. The metal/CoFe\(_{2}\)O\(_{4}/\)metal memory cell exhibits either unipolar resistive switching or bipolar resistive switching characteristics. The switching mechanism of the metal/CoFe\(_{2}\)O\(_{4}/\)metal memory cell can be well understood using conducting filament model. The review suggests that the switching cycle characteristics can be improved by proper choice of electrodes, synthesis technique and thickness of the active material thin film.
Similar content being viewed by others
References
B-H Lee, H Bae, H Seong, D-I Lee, H Park, Y J Choi, S-G Im, S O Kim and Y-K Choi, ACS Nano. 9, 7306 (2015)
R Chen, W Hu, A Hao and D Bao, J. Mater. Sci.: Mater. Electron. 30, 21477 (2019)
W Hu, N Qin, G Wu, Y Lin, S Li and D Bao, J. Am. Chem. Soc. 134, 14658 (2012)
W Hu, L Zou, R Chen, W Xie, X Chen, N Qin, S Li, G Yang and D Bao, Appl. Phys. Lett. 104, 143502 (2014)
Min Hwan Lee and Cheol Seong Hwang , Nanoscale. 3, 490 (2011)
M Ismail, A Hao, W Huang, J Lee, S Kim and D Bao, Appl. Phys. Lett. 113, 152103 (2018)
Lei Wu, Chunhui Dong, Xiaoqiang Wang, Jinsheng Li and Mingya Li, J. Alloys Compd. 779, 794 (2019)
D K Pradhan, S Kumari, L Li, R K Vasudevan, P T Das, V S Puli, D K Pradhan, A Kumar, P Misra, A K Pradhan, S V Kalinin and R S Katiyar, J. Appl. Phys. 122, 033902 (2017)
A Hao, D Jia, M Ismail, W Huang, R Chen and D Bao, Appl. Phys. Lett. 114, 203502 (2019)
Aize Hao, Dianzeng Jia, Muhammad Ismail, Ruqi Chen and Dinghua Bao, J. Alloys Compd. 790, 70 (2019)
Bai Sun, Xin Zhang, Guangdong Zhou, Chunming Zhang, Pingyuan Li, Yudong Xia and Yong Zhao, J. Alloys Compd. 694, 464 (2017)
U V Chhaya, B V Mistry, K H Bhavsar, M R Gadhavi, V K Lakhani, K B Modi and U S Joshi, Indian J. Pure Appl. Phys. 49, 833 (2011)
Ravi Prakash, Bhawani Pratap Singh Rathore and Davinder Kaur, J. Alloys Compd. 726, 693 (2017)
Jui-Yuan Chen, Cheng-Lun Hsin, Chun-Wei Huang, Chung-Hua Chiu, Yu-Ting Huang, Su-Jien Lin, Wen-Wei Wu and and Lih-Juann Chen, Nano Lett. 13, 7671 (2013)
S Slesazeck and T Mikolajick, Nanotechnol. 30, 352003 (2019)
T D Dongale, A A Bagade, S V Mohite, A D Rananavare, M K Orlowski, R K Kamat and K Y Rajpure, J. Mater. Sci.: Mater. Electron. 29, 3231 (2018)
C Jin, D X Zheng, P Li, W B Mi and H L Bai, Appl. Surface Sci. 263, 678 (2012)
M Kamran and M Anis-ur-Rehman, J. Alloys Comp. 822, 153583 (2020)
C Jiang, L Wu, W W Wei, C Dong and J Yao, Nanoscale Res. Lett. 9, 584 (2014)
Q Wang, Y Zhu, X Liu, M Zhao, M Wei, F Zhang, Y Zhang, B Sun and M Li, Appl. Phys. Lett. 107, 063502 (2015)
Millaty Mustaqima, Pilsun Yoo, Wei Huang, Bo Wha Lee and Chunli Liu, Nano Express. 10, 168 (2015)
R Chen, W Hu, L Zou, W Xie, B Li and D Bao, Appl. Phys. Lett. 104, 242111 (2014)
F Pan, S Gao, C Chen, C Song and F Zeng, Mater. Sci. Eng. R 83, 1 (2014)
T Kurosawa, Y C Lai, T Higashihara, M Ueda, C L Liu and W C Chen, Macromolecules 45, 4556 (2012)
Zedong Xu, Min Gao, Lina Yu, Liying Lu, Xiaoguang Xu and Yong Jiang, ACS Appl. Mater. Interfaces 6, 17823 (2014)
Li Ying Tao, Long Shi Bing, Liu Qi, Lu Hang Bing, Liu Su and Liu Ming, Chin. Sci. Bull. 56, 3072 (2011)
Sandeep Munjal and Neeraj Khare, Appl. Phys. Lett. 113, 243501 (2018)
Sandeep Munjal and Neeraj Khare, Sci. Rep. 7, 12427 (2017)
Acknowledgements
The authors sincerely acknowledge Mumbai University, Mumbai for recommending Minor Research Project (No. APD/ICD/2019-20/762 Sr. No. 576).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Gayakvad, K., Patankar, K.K. Cobalt ferrite as an active material for resistive random-access memory. Pramana - J Phys 95, 172 (2021). https://doi.org/10.1007/s12043-021-02211-z
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s12043-021-02211-z
Keywords
- Active material
- conducting filament model
- electrode
- metal/insulator/metal
- resistive random-access memory