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Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices

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Abstract

The fabrication and the performance of PMMA resistive switching device have been studied by using FR-4 (copper), PMMA (poly methyl methacrylate) and aluminum as the active anode, the solid electrolyte and the inert cathode respectively. By etching the copper surface with the acid solution [4HNO3 + 11H3PO4 (98 %) + 5CH3COOH] at 60 °C for 2 min, a good performance of Cu/PMMA/Al device, which can switch until 2300 cycles, has been realized. The spin rate for forming the PMMA coating plays a decisive role in the performance of Cu/PMMA/Al device. The best performance of the Cu/PMMA/Al device was obtained only when the spin rate of deposition of PMMA reached 4000 rpm (low thickness).

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Acknowledgments

This work is supported by Institute of Electronics of the South Montpellier (IES) of the group of M2A, as well as National Natural Science Foundation of China (No. 51301133) and Scientific Research Program Funded by Shaanxi Provincial Education Department (No. 2013JK0907).

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Authors and Affiliations

  1. School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an, China

    Jiaying Jian & Honglong Chang

  2. Institute of Electronics of the South (IES), University Montpellier, 34095, Montpellier Cedex 05, France

    Arnaud Vena & Brice Sorli

  3. School of Electronics and Information Engineering, Xi’an Technological University, Xi’an, China

    Jiaying Jian

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  1. Jiaying Jian
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  2. Honglong Chang
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  3. Arnaud Vena
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  4. Brice Sorli
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Correspondence to Jiaying Jian.

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Jian, J., Chang, H., Vena, A. et al. Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices. Microsyst Technol 23, 1719–1725 (2017). https://doi.org/10.1007/s00542-015-2754-6

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  • DOI: https://doi.org/10.1007/s00542-015-2754-6

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