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Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors

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Abstract

Based on the energy and momentum balance equations and three-dimensional Schrödinger equations, a physical model of the quantum coupling and electrothermal effects on the electron transport in GaN transistors is proposed. Quantum coupling and electrothermal effects in GaN transistors cause a reduction in the barrier height, changes in the quantised energy levels of the two-dimensional electron gas, and a decrease in the electron density and source–drain current. This model predicts that the current collapse in GaN transistors can occur under channel electrons with large transverse energy and it can be alleviated by optimising the physical device parameters. The gate length-dependent resistance predicted by the proposed model agrees well with the experimental data reported in the literature. Not only the physical mechanism but also the possibility to improve the reliability of high-electron mobility (HEMT) GaN transistors by optimising its physical parameters has been given in this model due to its analytic nature.

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Acknowledgements

The author acknowledges the financial support from the National Natural Science Foundation of China under Grant No. 61774014 and the Central Universities under Grant No. 06500010.

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  1. School of Computer and Communication Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing, 100083, People’s Republic of China

    Ling-Feng Mao

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Mao, LF. Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors. Pramana - J Phys 93, 11 (2019). https://doi.org/10.1007/s12043-019-1769-4

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