Abstract
A compact quantitative model based on oxide semiconductor interface density of states (DOS) is proposed for Al0.25Ga0.75N/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). Mathematical expressions for surface potential, sheet charge concentration, gate capacitance and threshold voltage have been derived. The gate capacitance behaviour is studied in terms of capacitance–voltage (CV) characteristics. Similarly, the predicted threshold voltage (V T) is analysed by varying barrier thickness and oxide thickness. The positive V T obtained for a very thin 3 nm AlGaN barrier layer enables the enhancement mode operation of the MOSHEMT. These devices, along with depletion mode devices, are basic constituents of cascode configuration in power electronic circuits. The expressions developed are used in conventional long-channel HEMT drain current equation and evaluated to obtain different DC characteristics. The obtained results are compared with experimental data taken from literature which show good agreement and hence endorse the proposed model.
Similar content being viewed by others
References
Z H Feng et al, Electron Device Lett. 31(12), 1386 (2010)
T R Lenka and A K Panda, Semiconductors 45(9), 1211 (2011)
T R Lenka and A K Panda, Semiconductors 45(5), 660 (2011)
M Miyoshi, M Sakai, S Arulkumaran, H Ishikawa, T Egawa, M Tanaka, and O Oda, Jpn J. Appl. Phys. 43(12), 7939 (2004)
M Higashiwaki, R Chu, and U K Mishra, IEEE Trans. Electron Device 58(11), 1681 (2011)
P Ye, B Yang, K Ng, J Bude, G Wilk, S Halder, and J Hwang, Int. J. High Speed Electron. Systems 14(3), 791 (2004)
A Colon and J Shi, Solid State Electron. 99, 25 (2014)
R Swain, J Panda, K Jena, and T R Lenka, J. Comput. Electron. 14(03), 754 (2015)
C J Kirkpatrick et al, Electron Device Lett. 33, 1240 (2012)
A Endoh et al, Jpn J. Appl. Phys. 43(4B), 2255 (2004)
R Brown et al, Electron Device Lett. 35(9), 906 (2014)
S Khandelwal and T A Fjeldly, Solid State Electron. 76, 60 (2012)
F M Yigletu and S Khandelwal, IEEE Trans. Electron Devices 60(11), 3746 (2013)
O Ambacher et al, Appl. Phys. Lett. 85(6), 3222 (1999)
M Tapajna and J Kuzmík, Jpn. J. Appl. Phys. 52, o8JN081-5 (2013)
S Kola, J M Golio, and G N Maracas, IEEE Electron Device Lett. 9(30), 136 (1988)
M Li and Y Wang, IEEE Trans. Electron Devices 55(1), 261 (2008)
X Cheng, M Li, and Y Wang, IEEE Trans. Electron Devices 56(12), 2881 (2009)
K Jena, R Swain and T R Lenka, Pramana – J. Phys. DOI:10.1007/s12043-015-0948-1 (2015)
D Yan, H Lu, D Cao, D Chen, R Zhang, and Y Zheng, Appl. Phys. Lett. 97(15), 153503 (2010)
D A Deen and J G Champlain, Appl. Phys. Lett. 99, 53501 (2011)
K Jena, R Swain, and T R Lenka, J. Semiconductors 36(3), 034003 (2015)
S M Sze, Physics of semiconductor devices, 3rd edn (John Wiley & Sons, 2007)
J Robertson and B Falabretti, J. Appl. Phys. 100, 0141111–8 (2006)
S Arulkumaran, T Egawa, and H Ishikawa, Jpn J. Appl. Phys. 44, 812 (2005)
Z Wang, B Zhang, W Chen, and Z Li, IEEE Trans. Electron Devices 60(5), 1607 (2013)
J H Bae, I Hwang, J M Shin, H -I Kwon, C H Park, J Ha, J Lee, H Choi, J Kim, J B Park, J Oh, J Shin, U I Chung, and J H Lee, Proceedings of IEEE IEDM, 303 (2012)
SILVACO, International Incorporated, ATLAS User’s Manual, Version 5.12.0.R. USA, Silvaco inc. (2010)
R Brown, A Al-Khalidi, D Macfarlane, S Taking, G Ternent, I Thayne, and E Wasige, Phys. Status Solidi C 11, 844 (2014)
Acknowledgements
The authors acknowledge the Microelectronics Computational Lab in the Department of Electronics & Communication Engineering of National Institute of Technology Silchar, India for providing all necessary facilities to carry out the research work.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
SWAIN, R., JENA, K. & LENKA, T.R. Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT. Pramana - J Phys 88, 3 (2017). https://doi.org/10.1007/s12043-016-1310-y
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s12043-016-1310-y
Keywords
- Two-dimensional electron gas
- density of state
- high electron mobility transistor
- metal oxide semiconductor high electron mobility transistor
- normally-off
- quantum capacitance.