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Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

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Abstract

Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4–5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, 781 039, India

    Purabi Gogoi & Pratima Agarwal

  2. Plasma Processed Materials Division, National Physical Laboratory, New Delhi, 110 012, India

    P. N. Dixit

Authors
  1. Purabi Gogoi
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  2. P. N. Dixit
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  3. Pratima Agarwal
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Correspondence to Pratima Agarwal.

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Gogoi, P., Dixit, P.N. & Agarwal, P. Transport and stability studies on high band gap a-Si:H films prepared by argon dilution. Pramana - J Phys 70, 351–358 (2008). https://doi.org/10.1007/s12043-008-0053-9

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  • DOI: https://doi.org/10.1007/s12043-008-0053-9

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