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Structural and optical properties analysis of Al nanoparticle-assisted SiOx thin film for photodetector application

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Abstract

This study investigated the effect of aluminium (Al) nanoparticle (NP) assisted on SiOx thin film for possible enhancement in photodetection using catalyst free e-beam evaporation with the glancing angle deposition technique. The X-ray diffraction spectrum confirms the presence of Al-NP, which is further supported by energy dispersive X-ray analysis. The top view field emission scanning electron microscope image of the p-Si/SiOx/Al-NP/SiOx/Al-NP sample reveals the successful deposition of a porous SiOx film coated with Al-NP. The optical absorption spectra of the samples with Al-NP show enhanced absorption in the UV as well as in the visible region compared to the samples without Al-NP, which may be due to the surface plasmon resonance effect of Al-NP. The measured photocurrent densities for the annealed p-Si/SiOx/Ag and p-Si/SiOx/Al-NP/SiOx/Al-NP/Ag devices were found to be about −2.02×10–3 and −5.53×10–3A cm–2 at −8 V, respectively. Moreover, the annealed p-Si/SiOx/Al-NP/SiOx/Al-NP/Ag based device shows improved rise time (~106 ms) and fall time (~108 ms) as compared to the rise time (~135 ms) and fall time (~192 ms) of p-Si/SiOx/Ag based device. These results indicate that the addition of Al metal NP assisted on SiOx thin film has a good impact on optical and electrical properties, which makes the proposed fabrication technique a promising one for photodetector and other optoelectronic applications.

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Acknowledgements

We would like to acknowledge the Microelectronics and Nanoelectronics Laboratory, Department of Electronics and Communication Engineering, Manipur Technical University for providing e-beam evaporation system, which was established by the funding of Science and Engineering Research Board (SERB), Government of India, under file no.: ECR/2018/000834. We would also like to acknowledge NIT Nagaland, for providing XRD and UV–Visible spectroscopy facilities. Thanks to the Department of Electronics and Communication Engineering and Department of Physics, NIT Manipur, for providing source measurement unit and photoluminicence measurements, respectively.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Manipur, Imphal, 795004, India

    Sapam Bikesh & Chitralekha Ngangbam

  2. Department of Electronics and Communication Engineering, Manipur Technical University, Imphal, 795004, India

    Salam Surjit Singh & Biraj Shougaijam

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  1. Sapam Bikesh
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  2. Chitralekha Ngangbam
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Correspondence to Biraj Shougaijam.

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Bikesh, S., Ngangbam, C., Singh, S.S. et al. Structural and optical properties analysis of Al nanoparticle-assisted SiOx thin film for photodetector application. Bull Mater Sci 45, 216 (2022). https://doi.org/10.1007/s12034-022-02802-5

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  • DOI: https://doi.org/10.1007/s12034-022-02802-5

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