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Thermodynamics of the oxidation of \(\hbox {ZrB}_{2}\)\(\hbox {TiB}_{2}\), \(\hbox {ZrB}_{2}\)–SiC and \(\hbox {ZrB}_{2}\)\(\hbox {B}_{4}\hbox {C}\) ceramics

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Abstract

The thermodynamics of the oxidation of three-high temperature \(\hbox {ZrB}_{2}\)-based ceramics (\(\hbox {ZrB}_{2}\)\(\hbox {TiB}_{2}\), \(\hbox {ZrB}_{2}\)–SiC and \(\hbox {ZrB}_{2}\)\(\hbox {B}_{4}\hbox {C}\)) has been studied in order to find the stability domain of zirconium diboride, in terms of temperature, partial pressure of oxygen and composition, in which it is protected against oxidation. In the case of the \(\hbox {ZrB}_{2}\)\(\hbox {TiB}_{2}\) binary system, a plot of log \(p_{\mathrm{O}_{2}}\) vs. 1/T in the temperature range of 500–2000 K and another plot of \(p_{\mathrm{O}_{2}}\) (\(\times 10^{14}\)) vs. \(x_{\mathrm{TiB}_{2}}\) for \(T = 2000\hbox { K}\) are made taking into account the two-extreme possibilities of no solubility and 100% solid solubility between \(\hbox {ZrB}_{2}\) and \(\hbox {TiB}_{2}\), respectively. A plot of log \(p_{\mathrm{CO}}\) vs. log \(p_{\mathrm{O}_{2}}\) is made for 1773 K for the systems \(\hbox {ZrB}_{2}\)–SiC and \(\hbox {ZrB}_{2}\)\(\hbox {B}_{4}\hbox {C}\). It was found that the \(\hbox {ZrB}_{2}\)\(\hbox {TiB}_{2}\) ceramics does not have sufficient oxidation resistance in the temperature range of 500–2000 K. \(\hbox {ZrB}_{2}\) of \(\hbox {ZrB}_{2}\)–SiC ceramics can be protected under 1 atmosphere oxygen or in air if the liquid borosilicate (with the chosen composition, 70% \(\hbox {B}_{2}\hbox {O}_{3}\)–30% \(\hbox {SiO}_{2}\)), which is an intermediate product, provides a kinetic barrier to the continuation of oxidation by forming an impervious layer on the exposed surfaces. In contrast, the \(\hbox {ZrB}_{2}\)\(\hbox {B}_{4}\hbox {C}\) ceramics does not produce the borosilicate upon oxidation. In view of the volatility of pure liquid \(\hbox {B}_{2}\hbox {O}_{3}\), it is recommended that the \(\hbox {ZrB}_{2}\)\(\hbox {B}_{4}\hbox {C}\) ceramics can be used at a lower temperature, perhaps below 1373 K, when the vapour pressure of \(\hbox {B}_{2}\hbox {O}_{3}\) is significantly small.

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Acknowledgements

The authors would like to thank the Director, CSIR-CGCRI for giving permission to undertake the present work. The authors are also grateful to DRDO, New Delhi and CSIR, New Delhi for financial help.

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Correspondence to Dinabandhu Ghosh.

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Chakraborty, S., Das, P.K. & Ghosh, D. Thermodynamics of the oxidation of \(\hbox {ZrB}_{2}\)\(\hbox {TiB}_{2}\), \(\hbox {ZrB}_{2}\)–SiC and \(\hbox {ZrB}_{2}\)\(\hbox {B}_{4}\hbox {C}\) ceramics. Bull Mater Sci 42, 245 (2019). https://doi.org/10.1007/s12034-019-1934-x

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  • DOI: https://doi.org/10.1007/s12034-019-1934-x

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