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Resistance-switching properties of Bi-doped \(\hbox {SrTiO}_{3}\) films for non-volatile memory applications with different device structures

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Abstract

\(\hbox {SrTiO}_{3}\) and Bi-doped \(\hbox {SrTiO}_{3}\) films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. \(\hbox {SrTiO}_{3}\) and \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si is slightly larger than those of the \(\hbox {SrTiO}_{3}\) films grown on Si and the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Pt. The \(\hbox {SrTiO}_{3}\) or \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the \(\hbox {Ag}/\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}/\hbox {Si}\) device possesses the highest \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of \(10^{5}\) and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of the \(\hbox {SrTiO}_{3}\) films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films.

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Acknowledgements

This work was financially supported by the Guangxi Natural Science Foundation, China (Grant No. 2015GXNSFAA139253).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Hua Wang, Wenbo Zhang, Jiwen Xu, Guobao Liu, Hang Xie & Ling Yang

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  1. Hua Wang
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  2. Wenbo Zhang
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  3. Jiwen Xu
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  4. Guobao Liu
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  5. Hang Xie
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  6. Ling Yang
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Correspondence to Hua Wang.

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Wang, H., Zhang, W., Xu, J. et al. Resistance-switching properties of Bi-doped \(\hbox {SrTiO}_{3}\) films for non-volatile memory applications with different device structures. Bull Mater Sci 41, 149 (2018). https://doi.org/10.1007/s12034-018-1677-0

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