Abstract
Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with c-axis orientation, uniform thickness and dense surface. Electrical and optical properties demonstrated that, an amount of LiZn defect had existed in ZnO annealed under O2ambient and an amount of Lii(o) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO.
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Acknowledgments
This work was supported by the Research Foundation of Education Bureau of Liaoning Province, China (No. L2011098), the Foundation for Key Program of Ministry of Education, China (No. 212031) and the National Nature Science Foundation of China (No. 51074087).
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WANG, B., TANG, L. Analysis of Li-related defects in ZnO thin films influenced by annealing ambient. Bull Mater Sci 37, 35–39 (2014). https://doi.org/10.1007/s12034-014-0619-8
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DOI: https://doi.org/10.1007/s12034-014-0619-8