Abstract
Optical properties of the chalcogenides GeSe3, Sb2Se3, ZnSe, (GeSe3)80(Sb2Se3)20 and (GeSe3)70 (Sb2Se3)10(ZnSe)20 thin films are investigated. Incorporation of ZnSe into both GeSe3, Sb2Se3 results in amorphous (GeSe3)70(Sb2Se3)10(ZnSe)20 composition. The estimated optical energy gap, E g, is found to decrease from 3.06 eV for ZnSe to 1.81 eV for (GeSe3)70(Sb2Se3)10(ZnSe)20. While, the band tail width, E e, exhibits an opposite trend. The E g behaviour is believed to be associated with cohesive energy, CE, as the incorporation of ZnSe lowers its value. The calculated number of the excess of Se-Se homopolar bonds is found to affect mainly the E e values. The refractive index, n, is discussed in terms of Wemple-DiDomenico single oscillator dispersion model in the normal dispersion region. The oscillator energy, E o, and the dispersion energy, E d, are determined for films under investigation.
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Balboul, M.R., Hosni, H.M., Soliman, M.A. et al. Effect of composition on optical properties of GeSe3-Sb2Se3-ZnSe thin films. Bull Mater Sci 37, 1255–1263 (2014). https://doi.org/10.1007/s12034-014-0070-x
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DOI: https://doi.org/10.1007/s12034-014-0070-x