Abstract
Nb-doped ZnO films with (002) orientation have been grown on glass substrates by rf magnetron sputtering followed by vacuum annealing at 400°C for 3 h. The microstructures and surface figures of the Nbdoped ZnO films were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. And its optical and electrical properties were measured at room temperature using a four-point probe technique and 756-type spectrophotometer, respectively. X-ray diffraction (XRD) revealed that the films are highly textured along the c axis and perpendicular to the surface of the substrate. After annealing at 400°C for 180 min under vacuum, transmittance of about 90% in visible region for Nb doped ZnO films was confirmed by the optical transmission spectra, and the low resistivity of 5·47 × 10−3 Ω·cm was obtained.
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Xu, J.W., Wang, H., Jiang, M.H. et al. Properties of Nb-doped ZnO transparent conductive thin films deposited by rf magnetron sputtering using a high quality ceramic target. Bull Mater Sci 33, 119–122 (2010). https://doi.org/10.1007/s12034-010-0016-x
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DOI: https://doi.org/10.1007/s12034-010-0016-x