Abstract
Materials with low dielectric constants are being developed to replace silicon dioxide as interlevel dielectrics. This paper discusses material issues and the characterization of low-k materials for integration into advanced interconnects. Measurement techniques for the characterization of low-k films are discussed, and the results for several classes of low-k materials are presented. The properties of these materials are discussed in relation to structure-property relationships.
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For more information, contact P. Ho, University of Texas, Institute for Materials Science, Austin, Texas 78712; (512) 471-8961; fax (512) 471-8969; e-mail paulho@mail.utexas.edu.
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Morgen, M., Zhao, JH., Hu, C. et al. Low dielectric constant materials for advanced interconnects. JOM 51, 37–40 (1999). https://doi.org/10.1007/s11837-999-0158-8
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DOI: https://doi.org/10.1007/s11837-999-0158-8