Abstract
In this study, solder-based die-attach processes used to affix GaAs devices to heat-spreading carriers were investigated. The solder microstructures were assessed, focusing on void formation, the response of the solder, the backsurface metallization, and the carrier plating to die attachment and reflow thermal processes. Voided regions were found in all solder joints, with a dramatic sensitivity to temperature cycles. Gold-tin alloy phases were found to dominate the solder microstructure for all of the configurations. The total thermal budget was a critical issue in the formation and transformation of various phases as expected for low-melting-point alloys. The NiV-Au backmetal system was investigated to determine the suitability for die attachment.
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J.M. Parsey, Jr., earned his Ph.D. in materials science at the Massachusetts Institute of Technology in 1982. He is currently a section manager, advanced materials, at Motorola ESTL. Dr. Parsey is also a member of TMS.
S. Valocchi earned her M.S. in mechanical engineering/thermal sciences at Arizona State University in 1989. She is currently a process engineer at Motorola.
W. Cronin earned his B.Sc. in electrical engineering at Arizona State University in 1979. He is currently a section manager, metals and thinning, at Motorola.
J. Mohr earned his M.S. in materials science at Arizona State University in 1990. He is currently a senior technologist at Motorola.
B.L. Scrivner earned his B.S. in business administration at the University of Phoenix in 1994. He is currently a product manager at Motorola.
K. Kyler earned his B.S. in chemistry at Brigham Young University in 1987. He is currently a process development engineer at Motorola PCRL.
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Parsey, J.M., Valocchi, S., Cronin, W. et al. A metallurgical assessment of SnPbAg solder for GaAs power devices. JOM 51, 28–31 (1999). https://doi.org/10.1007/s11837-999-0024-8
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DOI: https://doi.org/10.1007/s11837-999-0024-8