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Metallurgical techniques for more reliable integrated circuits

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Abstract

One of the primary concerns in the manufacture of advanced microelectronic devices is to ensure that metallic contacts and interconnects do not fail by electromigration or stress-induced voiding. This article discusses the possibility of implementing two kinds of beneficial treatments within normal manufacturing processes—treatments that modify grain structure to minimize failures through diffusional flux divergence and treatments that control solute and precipitate distributions in order to avoid undesirable, overaged microstructures at the end of manufacturing.

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Authors and Affiliations

  1. Bell Laboratories, Lucent Technologies, 9333 S. John Young Parkway, 32819, Orlando, Florida

    S. H. Kang

Authors
  1. S. H. Kang
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  2. J. W. Morris Jr.
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  3. A. S. Oates
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Additional information

S.H. Kang earned his Ph.D. in materials science and engineering at the University of California at Berkeley in 1996. He is currently a member of the technical staff at Bell Laboratories, Lucent Technologies.

J.W. Morris, Jr., earned his Sc.D. in materials science at the Massachusetts Institute of Technology in 1969. He is currently a professor of metallurgy and principal investigator at Lawrence Berkeley National Laboratory. Dr. Morris is a member of TMS.

A.S. Oates earned his Ph.D. in physics at the University of Reading, United Kingdom, in 1985. He is currently a manager at Bell Laboratories, Lucent Technologies.

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Kang, S.H., Morris, J.W. & Oates, A.S. Metallurgical techniques for more reliable integrated circuits. JOM 51, 16–18 (1999). https://doi.org/10.1007/s11837-999-0021-y

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  • DOI: https://doi.org/10.1007/s11837-999-0021-y

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