Abstract
Compared with the chemical vapor deposition method, the high-pressure and high-temperature (HPHT) method has some advantages, such as fast diamond crystal growth speed, mature technology and easy mass production. HPHT method synthetic diamond is widely used industrially, but gem-quality synthetic diamond from China has rarely been reported. In this work, the gem-quality diamond synthesized by State Key Laboratory of Superhard Materials, Jilin University, China (SKLSHM), using the cubic hinge press equipment by the HPHT method, was investigated by microscopy, field-emission scanning electron microscopy (FE-SEM) and Diamond View observations as well as infrared spectrometer, ultraviolet–visible spectrometer (UV spectrometer) and energy-dispersive x-ray fluorescence tests. FE-SEM observation showed that regular growth steps and obvious growth pits were common on the {100} surface, and they were consistent with the distribution of internal metal inclusions. In most cases, the {111} plane is significantly flatter than the {100} plane, which may be related to the surface atomic state. It also can be seen that the internal metal inclusions are easily aligned along the internal growth boundary,which may be due to the different growth rates of different crystal faces during diamond growth. The fluorescent image under Diamond View shows the special geometric growth zone structure. Cubes, octahedrons and rhombohedral dodecahedrons have different intensities of orange, yellow, blue and other uneven fluorescences, which can be used as the most important diagnostic evidence.
Similar content being viewed by others
References
J. Fu, T.F. Zhu, M.H. Zhang, X. Zhang, F.N. Li, Z.C. Liu, G.A. Denu, Y.F. Wang, D. Zhao, G.Q. Shao, X.H. Chang, W. Wang, J.W. Zhang, H.X. Wang, J.J. Wang, and X. Hou, Diam. Relat. Mater. 80, 64 (2017). 10.1016/j.diamond.2017.09.016.
S. Masuyaa, K. Hanadaa, T. Oshimaa, H. Sumiyab, and M. Kasu, Diam. Relat. Mater. 75, 155 (2017). 10.1016/j.diamond.2017.04.003.
C. Fang, X.P. Jia, N. Chen, Y.D. Li, L.S. Guo, L.C. Chen, H.A. Ma, and X.B. Liu, J. Cryst. Growth 436, 34 (2015). 10.1016/j.jcrysgro.2015.11.042.
A.V. Korsakov, M. Perraki, D.A. Zedgenizov, L. Bindi, P. Vandenabeele, A. Suzuki, and H. Kagi, J. Petrol. 51, 763 (2010). 10.1093/petrology/egq001.
G.F. Huang, C.Y. Zang, H.A. Ma, S.S. Li, Y. Tian, H.Y. Xiao, Y.F. Zhang, L.Q. Ma, Y. Li, X.Z. Chen, and X.P. Jia, Superhard Mater. Eng. 6, 9 (2008). 10.3969/j.issn.1673-1433.2008.06.003.
H.Y. Xiao, H.A. Ma, Y. Tian, R. Li, S.S. Li, L.Q. Ma, Y. Li, and X.P. Jia, Chin. Sci. Bull. 55, 7 (2010). 10.1007/s11434-009-0515-6.
W.Y. Wang and T. Moses, Gems. Gemol. 46, 301 (2010).
B. Harte, I.C.W. Fitzsimons, J.W. Harris, and M. Lotter, Miner. Mag. 63, 829 (1999). 10.1180/002646199548961.
I. Kiflawi, A.E. Mayer, P.M. Spear, J.A. Wyk, and G.S. Woods, Philos. Mag. B 69, 1141 (1994). 10.1080/01418639408240184.
Z.Z. Liang, J.Q. Liang, N. Zheng, X.P. Jia, and G.J. Li, Acta Phys. Sin. 58, 8039 (2009).
C.Y. Zang, H.G. Ma, Z.Z. Liang, S.S. Li, Y.F. Zhang, and X.P. Jia, Diam. Abras. Eng. 6, 9 (2006). 10.3969/j.issn.1006-852X.2006.06.003.
M.S. Peng, Y.F. Meng, and Z.J. Yang, Acta Miner. Sin. 23, 211 (2003). 10.3321/j.issn:1000-4734.2003.03.004.
Y. Zhang, S.Y. Xu, L.X. Cheng, P.W. Zhu, H.A. Ma, W.L. Guo, X.P. Jia, G.T. Zou, and J. Jilin, Sci. Ed. 47, 815 (2009). 10.3321/j.issn:1671-5489.2009.04.033.
H.Y. Xiao, H.A. Ma, Y. Tian, Y. Li, and X.P. Jia, J. Funct. Mater. 1, 87 (2010).
J.Q. Zhang, X.P. Jia, H.G. Ma, G.Z. Ren, C.Y. Zang, and Y.P. Jiang, Diam. Abras. Eng. 25, 15 (2005).
C.Y. Zang, K. Chen, Q. Hu, G.F. Huang, X.Z. Chen, and X.P. Jia, J. Synth. Cryst. 3, 677 (2009).
H.S. Li, Y.X. Qi, and M.S. Li, Diam. Abras. Eng. 5, 7 (2008).
Y.J. Zheng, H.A. Ma, L. Zhou, J.M. Qin, and X.P. Jia, J. Synth. Cryst. 37, 677 (2008).
Acknowledgements
Thanks to Dr. Xiaopeng Jia and Dr. Hong’an Ma from Jilin University who provided the synthetic diamonds and supported out research. Thanks to Dr. Taijin Lu at NGTC who led the research and to Ms. Zhonghua Song who helped us with the experiments.
Author information
Authors and Affiliations
Corresponding authors
Ethics declarations
Conflicts of interest
There are no conflicts to declare.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Electronic supplementary material
Below is the link to the electronic supplementary material.
Rights and permissions
About this article
Cite this article
He, X., Du, M., Zhang, Y. et al. Gemologic and Spectroscopy Properties of Chinese High-Pressure High-Temperature Synthetic Diamond. JOM 71, 2531–2540 (2019). https://doi.org/10.1007/s11837-019-03592-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11837-019-03592-8