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Relaxation, Structure, and Properties of Semicoherent Interfaces

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Abstract

Materials containing a high density of interfaces are promising candidates for future energy technologies because interfaces acting as sources, sinks, and barriers for defects can improve mechanical and irradiation properties of materials. A semicoherent interface widely occurring in various materials is composed of a network of misfit dislocations and coherent regions separated by misfit dislocations. In this article, we review the relaxation mechanisms, structure, and properties of (111) semicoherent interfaces in face-centered cubic structures.

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Acknowledgements

S. Shao and J. Wang acknowledge the support provided by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences. J. Wang also acknowledges the support provided by the Los Alamos National Laboratory Directed Research and Development (LDRD-ER20140450) and the start-up provided by the University of Nebraska-Lincoln. The valuable discussion with Prof. A. Misra, I. J. Beyerlein, J. P. Hirth, Richard G. Hoagland, and Robert Pond is appreciated.

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Authors and Affiliations

  1. MST-8, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

    S. Shao

  2. Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA

    J. Wang

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  1. S. Shao
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  2. J. Wang
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Correspondence to S. Shao.

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Shao, S., Wang, J. Relaxation, Structure, and Properties of Semicoherent Interfaces. JOM 68, 242–252 (2016). https://doi.org/10.1007/s11837-015-1691-2

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  • DOI: https://doi.org/10.1007/s11837-015-1691-2

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